DNA30E2200PZ-TUB

DNA30E2200PZ High Voltage Standard Rectifier VRRM = 2200 V I FAV = 30 A VF = 1.24 V Single Diode Part number DNA30E2200PZ Marking on Product: DNA30E2200PZ Backside: anode 1 3 Features / Advantages: Applications: Package: TO-263 (D2Pak-HV) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212e DNA30E2200PZ Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved max. Unit 2300 V 2200 V TVJ = 25°C 40 µA VR = 2200 V TVJ = 150°C 1.5 mA TVJ = 25°C 1.26 V 1.53 V 1.24 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 150 °C TC = 140 °C 1.63 V T VJ = 175 °C 30 A TVJ = 175 °C 0.83 V 13.4 mΩ d = 0.5 for power loss calculation only R thCH typ. VR = 2200 V rectangular Ptot min. 0.7 K/W K/W 0.25 TC = 25°C 210 W t = 10 ms; (50 Hz), sine TVJ = 45°C 370 A t = 8,3 ms; (60 Hz), sine VR = 0 V 400 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 315 A t = 8,3 ms; (60 Hz), sine VR = 0 V 340 A t = 10 ms; (50 Hz), sine TVJ = 45°C 685 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V 665 A²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 495 A²s 480 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 700 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 7 pF 20190212e DNA30E2200PZ Package Ratings TO-263 (D2Pak-HV) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1.5 Weight FC 20 mounting force with clip d Spp/App typ. Product Marking D N A 30 E 2200 PZ IXYS Zyyww Logo Assembly Line Date Code N 4.2 mm terminal to backside 4.7 mm Part description XXXXXXXXX Part No. 60 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g = = = = = = = Diode High Voltage Standard Rectifier (>= 2000V) Current Rating [A] Single Diode Reverse Voltage [V] TO-263AB (D2Pak) (2HV) 000000 Assembly Code Ordering Standard Alternative Ordering Number DNA30E2200PZ-TRL DNA30E2200PZ-TUB Similar Part DNA30EM2200PZ DNA30E2200PA DNA30E2200FE DNA30E2200IY Equivalent Circuits for Simulation I V0 R0 Marking on Product DNA30E2200PZ DNA30E2200PZ Package TO-263AB (D2Pak) (2HV) TO-220AC i4-Pac (2HV) TO-262 (I2Pak) (2HV) * on die level Delivery Mode Tape & Reel Tube Code No. 514460 525361 Voltage class 2200 2200 2200 2200 T VJ = 175 °C Rectifier V 0 max threshold voltage 0.83 V R0 max slope resistance * 10.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 800 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212e DNA30E2200PZ Outlines TO-263 (D2Pak-HV) Dim. W Supplier Option D1 L1 c2 A1 H D E A 1 4 3 L e1 D2 A2 c 2x e 2x b2 10.92 (0.430) W E1 Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.091 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) 9.02 (0.355) mm (Inches) 2x b A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.3 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212e DNA30E2200PZ Rectifier 60 300 40 250 103 VR = 0 V TVJ = 45°C IF IFSM [A] [A] 20 TVJ = 45°C 2 It 200 TVJ = 150°C TVJ = 125°C TVJ = 25°C 0 0.5 1.0 [A2s] TVJ = 150°C TVJ = 150°C 50 Hz, 80% VRRM 1.5 2.0 102 150 0.001 VF [V] 0.01 0.1 1 1 t [s] Fig. 2 Surge overload current Fig. 1 Forward current versus voltage drop per diode 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 3 I t versus time per diode 50 40 RthKA = 40 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 4.0 K/W 8.0 K/W dc = 1 0.5 0.4 0.33 0.17 0.08 30 Ptot 30 dc = 1 0.5 0.4 0.33 0.17 0.08 IF(AV)M 20 [A] 20 [W] 10 10 0 0 0 10 20 30 0 25 50 IF(AV)M [A] 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 Tamb [°C] TC [°C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current versus case temperature 0.8 0.6 Constants for ZthJC calculation: ZthJC i 0.4 [K/W] 0.2 Rthi (K/W) ti (s) 1 0.03 0.0003 2 0.072 0.0065 3 0.131 0.027 4 0.367 0.105 5 0.1 0.8 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212e