DPF240X200NA

DPF240X200NA preliminary HiPerFRED VRRM = 200 V I FAV = 2x 120 A t rr = 55 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DPF240X200NA Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220114d DPF240X200NA preliminary Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop min. typ. 200 TVJ = 25°C 10 µA VR = 200 V TVJ = 150°C 0,5 mA I F = 120 A TVJ = 25°C 1,19 V 1,51 V 1,06 V TVJ = 150 °C I F = 120 A I F = 240 A average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case V VR = 200 V I F = 240 A I FAV max. Unit 200 V TC = 85 °C rectangular 1,48 V T VJ = 150 °C 120 A TVJ = 150 °C 0,61 V 3,6 mΩ d = 0.5 for power loss calculation only 0,5 K/W 0,10 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 100 V f = 1 MHz TVJ = 25°C 328 pF I RM max. reverse recovery current TVJ = 25 °C 6 A I F = 120 A; VR = 100 V TVJ = 125 °C 16 A t rr reverse recovery time -di F /dt = 200 A/µs TVJ = 25 °C 55 ns TVJ = 125 °C 85 ns IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved TC = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 310 W 1,20 kA 20220114d DPF240X200NA preliminary Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1,1 1,5 Nm MT terminal torque 1,1 1,5 Nm d Spp/App d Spb/Apb VISOL t = 1 minute Product Marking Logo yywwZ ® XXXXX 123456 Location UL Ordering Standard Part Number Ordering Number DPF240X200NA R0 50/60 Hz, RMS; IISOL ≤ 1 mA D P F 240 X 200 NA = = = = = = = 6,8 mm 3000 V 2500 V Diode HiPerFRED ultra fast Current Rating [A] Parallel legs Reverse Voltage [V] SOT-227B (minibloc) Marking on Product DPF240X200NA Package SOT-227B (minibloc) * on die level Delivery Mode Tube Quantity 10 Code No. 512342 Voltage class 200 T VJ = 150°C Fast Diode V 0 max threshold voltage 0,61 V R0 max slope resistance * 1,6 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved mm Lot# Equivalent Circuits for Simulation V0 8,6 3,2 Part description Similar Part DSEI2x121-02A I 10,5 t = 1 second isolation voltage Date Code terminal to terminal terminal to backside creepage distance on surface | striking distance through air Data according to IEC 60747and per semiconductor unless otherwise specified 20220114d DPF240X200NA preliminary Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220114d DPF240X200NA preliminary Fast Diode 3,0 45 40 200 2,5 IF = 240 A 120 A 30 A 2,0 150 30 IRM 25 Qrr IF 1,5 TVJ = 125°C 150°C 100 [A] [µC] [A] 1,0 50 20 15 TVJ = 125°C VR = 240 V 0,5 25°C 0,4 0,8 1,2 5 0 0 1,6 200 400 600 0 1,4 220 1,2 200 1,0 180 2800 TVJ = 125°C VR = 240 V 120 0,2 100 Qrr 0,0 40 80 120 160 IF = 240 A 120 A 30 A 120 0,5 100 16 1200 12 400 600 8 0 200 400 600 -diF /dt [A/µs] Fig. 6 Typ. forward recovery voltage VFR & tfr vs. diF /dt ZthJC 120 A 30 A Erec 200 0,4 IF = 240 A 80 20 1600 Fig. 5 Typ. reverse recovery time trr vs. -diF /dt 0,6 24 [V] -diF /dt [A/µs] TVJ [°C] 140 VFR 800 0 Fig. 4 Typ. dynamic parameters Qrr, IRM vs. TVJ 28 VFR 80 0 TVJ = 125°C VR = 240 V IF = 120 A [ns] 140 0,4 600 2000 [ns] IRM 400 tfr 160 Kf tfr 2400 trr 0,8 200 -diF /dt [A/µs] Fig. 3 Typ. reverse recovery current IRM vs. -diF /dt -diF /dt [A/µs] Fig. 2 Typ. reverse recovery charge Qrr vs. -diF /dt VF [V] Fig. 1 Forward current IF vs. VF 0,6 TVJ = 125°C VR = 240 V 10 0,0 0,0 IF = 240 A 120 A 30 A 35 0,3 60 [K/W] [µJ] 0,2 40 0,1 TVJ = 125°C VR = 240 V 20 0 0 200 400 600 -diF /dt [A/µs] Fig. 7 Typ. recovery energy Erec vs. -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved 0,0 10 0 10 1 102 103 10 4 t [ms] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20220114d