DPF240X400NA

DPF240X400NA HiPerFRED VRRM = 400 V I FAV = 2x 120 A t rr = 30 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DPF240X400NA Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPF240X400NA Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop min. typ. 400 TVJ = 25°C 10 µA VR = 400 V TVJ = 150°C 0.5 mA I F = 120 A TVJ = 25°C 1.25 V 1.54 V 1.06 V TVJ = 150 °C I F = 120 A I F = 240 A average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case V VR = 400 V I F = 240 A I FAV max. Unit 400 V TC = 70 °C rectangular 1.42 V T VJ = 150 °C 120 A TVJ = 150 °C 0.71 V 2.9 mΩ d = 0.5 for power loss calculation only 0.5 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 200 V f = 1 MHz TVJ = 25°C 187 pF I RM max. reverse recovery current TVJ = 25 °C 7 A I F = 120 A; VR = 240 V TVJ = 125 °C 18 A t rr reverse recovery time -di F /dt = 200 A/µs TVJ = 25 °C 30 ns TVJ = 125 °C 140 ns IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 0.1 TC = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 250 W 1.20 kA 20200211c DPF240X400NA Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App d Spb/Apb VISOL Product Marking Logo XXXXX ® yywwZ 1234 Date Code Location Ordering Standard 8.6 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Part description Part Number UL D P F 240 X 400 NA = = = = = = = Diode HiPerFRED ultra fast Current Rating [A] Parallel legs Reverse Voltage [V] SOT-227B (minibloc) Lot# Ordering Number DPF240X400NA Equivalent Circuits for Simulation V0 10.5 t = 1 second isolation voltage t = 1 minute I terminal to terminal terminal to backside creepage distance on surface | striking distance through air R0 Marking on Product DPF240X400NA * on die level Delivery Mode Tube Code No. 499554 T VJ = 150°C Fast Diode V 0 max threshold voltage 0.71 V R0 max slope resistance * 1.01 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPF240X400NA Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPF240X400NA Fast Diode 3.0 45 40 200 2.5 IF = 240 A 120 A 30 A 2.0 150 30 IRM 25 Qrr IF 1.5 100 TVJ = 125°C 150°C [A] [µC] [A] 1.0 50 20 15 TVJ = 125°C VR = 240 V 0.5 25°C 0.4 0.8 5 1.2 1.6 0 0 2.0 200 400 600 0 -diF /dt [A/µs] Fig. 2 Typ. reverse recovery charge Qrr vs. -diF /dt VF [V] Fig. 1 Forward current IF vs. VF 1.4 1.2 2800 200 1.0 TVJ = 125°C VR = 240 V 0.8 160 TVJ = 125°C VR = 240 V IF = 120 A 28 VFR 24 VFR 20 [ns] 140 0.4 600 2000 [ns] IRM 400 tfr trr Kf tfr 2400 180 200 -diF /dt [A/µs] Fig. 3 Typ. reverse recovery current IRM vs. -diF /dt 220 0.6 TVJ = 125°C VR = 240 V 10 0.0 0.0 IF = 240 A 120 A 30 A 35 [V] 1600 16 1200 12 120 0.2 IF = 240 A 120 A 30 A 100 Qrr 0.0 80 0 40 80 120 160 800 0 Fig. 4 Typ. dynamic parameters Qrr, IRM vs. TVJ 600 0.6 120 0.5 100 8 0 200 400 600 -diF /dt [A/µs] Fig. 6 Typ. forward recovery voltage VFR & tfr vs. diF /dt Fig. 5 Typ. reverse recovery time trr vs. -diF /dt 140 0.4 IF = 240 A 80 400 -diF /dt [A/µs] TVJ [°C] ZthJC 120 A 30 A Erec 200 0.3 60 [K/W] [µJ] 0.2 40 0.1 TVJ = 125°C VR = 240 V 20 0 0 200 400 600 0.0 10 0 -diF /dt [A/µs] Fig. 7 Typ. recovery energy Erec vs. -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 10 1 102 10 3 10 4 t [ms] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c