DPF30I300PA

DPF30I300PA HiPerFRED VRRM = 300 V I FAV = 30 A t rr = 55 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPF30I300PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPF30I300PA Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 300 V 300 V VR = 300 V TVJ = 25°C 5 µA VR = 300 V TVJ = 150°C 0.25 mA IF = 30 A TVJ = 25°C 1.17 V IF = 60 A 1.37 V IF = 30 A 0.98 V IF = 60 A TVJ = 150 °C TC = 145 °C rectangular 1.21 V T VJ = 175 °C 30 A TVJ = 175 °C 0.72 V 7.4 mΩ d = 0.5 for power loss calculation only 0.85 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 150 V f = 1 MHz TVJ = 25°C 42 pF TVJ = 25 °C 6 A TVJ = 125 °C 10 A TVJ = 25 °C 55 ns TVJ = 125 °C 85 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.5 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 30 A; VR = 200 V -di F /dt = 200 A/µs 175 390 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20200211c DPF30I300PA Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number Logo Date Code Lot # g 0.4 0.6 Nm 20 60 N Part description D P F 30 I 300 PA XXXXXX = = = = = = = Diode HiPerFRED ultra fast Current Rating [A] Single Diode Reverse Voltage [V] TO-220AC (2) yywwZ 123456 Location Ordering Standard Ordering Number DPF30I300PA Similar Part DPG30I300PA DPG30I300HA Equivalent Circuits for Simulation I V0 R0 Marking on Product DPF30I300PA Package TO-220AC (2) TO-247AD (2) * on die level Delivery Mode Tube Code No. 511414 Voltage class 300 300 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.72 V R0 max slope resistance * 4.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPF30I300PA Outlines TO-220 A = supplier option H1 ØP D 4 3 L1 1 L 2x b2 2x b C e A2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPF30I300PA Fast Diode 1.2 80 24 1.0 20 IF = 60 A 30 A 15 A 0.8 60 16 IRM Qrr IF 0.6 40 12 [μC] [A] IF = 60 A 30 A 15 A [A] 0.4 8 TVJ = 150°C 20 0 0.0 TVJ = 125°C VR = 200 V 0.2 25°C 0.0 0.4 0.8 1.2 1.6 0 0 2.0 VF [V] Fig. 1 Forward current IF versus VF 200 400 600 0 120 90 0.8 trr Kf 600 VFR tfr 10 800 8 tfr 600 6 100 1.0 400 1000 TVJ = 125°C VR = 200 V 110 1.2 200 -diF /dt [A/μs] Fig. 3 Typ. reverse recovery current IRM versus -diF /dt -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 1.4 TVJ = 125°C VR = 200 V 4 VFR 80 0.6 [ns] IRM [ns] 400 70 0.4 IF = 60 A 30 A 15 A 60 Qrr 0.2 4 [V] TVJ = 125°C VR = 200 V IF = 30 A 200 50 0.0 40 0 40 80 120 160 0 0 200 400 600 0 -diF /dt [A/μs] TVJ [°C] Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ 40 2 200 400 0 600 -diF /dt [A/μs] Fig. 6 Typ. forward recov. voltage VFR Fig. 5 Typ. reverse recovery time trr versus -diF /dt & recovery time tfr vs. diF /dt 1.0 0.8 30 IF = 60 A 30 A 15 A Erec 0.6 ZthJC 20 [μJ] 0.4 [K/W] 10 0.2 TVJ = 125°C VR = 200 V 0 0 200 400 600 0.0 10 -3 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 10 -2 10 -1 10 0 10 1 t [s] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c