DPF60C200HJ

DPF60C200HB HiPerFRED VRRM = I FAV = 2x 30 A t rr = 55 ns 200 V High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPF60C200HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPF60C200HB Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 200 V 200 V VR = 200 V TVJ = 25°C 5 µA VR = 200 V TVJ = 150°C 0.25 mA IF = 30 A TVJ = 25°C 1.11 V IF = 60 A 1.30 V IF = 30 A 0.91 V IF = 60 A TVJ = 150 °C TC = 150 °C rectangular 1.11 V T VJ = 175 °C 30 A TVJ = 175 °C 0.67 V 6.6 mΩ d = 0.5 for power loss calculation only 0.95 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 150 V f = 1 MHz TVJ = 25°C 42 pF TVJ = 25 °C 6 A TVJ = 125 °C 10 A TVJ = 25 °C 55 ns TVJ = 125 °C 85 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.3 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 30 A; VR = 100 V -di F /dt = 200 A/µs 160 400 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20200211b DPF60C200HB Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 °C -55 150 °C 150 °C 1) 6 Weight MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part description D P F 60 C 200 HB IXYS Logo g = = = = = = = Diode HiPerFRED ultra fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DPF60C200HB Similar Part DPF60C200HJ DPG60C200HB DPG60C200QB DPF80C200HB Equivalent Circuits for Simulation I V0 R0 Package ISOPLUS247 (3) TO-247AD (3) TO-3P (3) TO-247AD (3) * on die level Delivery Mode Tube Quantity 30 Code No. 511115 Voltage class 200 200 200 200 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.67 R0 max slope resistance * 4 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product DPF60C200HB V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPF60C200HB Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b b4 C A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPF60C200HB Fast Diode 1.2 80 24 TVJ = 125°C VR = 200 V 1.0 30 A IRM 16 40 15 A [μC] 0.6 [A] 20 10 0.4 8 25°C 0.2 0.4 14 12 TVJ = 150°C 0 0.0 15 A 18 Qrr 0.8 [A] 30 A 20 60 IF 60 A TVJ = 125°C VR = 200 V 22 60 A 0.8 1.2 6 0 1.6 VF [V] Fig. 1 Forward current IF versus VF 200 400 600 0 1.4 110 1.2 400 1000 TVJ = 125°C VR = 200 V 100 1.0 200 600 -diF /dt [A/μs] Fig. 3 Typ. reverse recov. current IRM versus -diF /dt -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt VFR tfr 10 800 8 tfr 600 6 90 0.8 trr Kf 0.6 80 60 A [ns] IRM [ns] 400 VFR 4 [V] 70 0.4 30 A Qrr 0.2 TVJ = 125°C VR = 200 V IF = 30 A 200 60 15 A 0.0 50 0 40 80 120 160 0 0 200 400 600 0 -diF /dt [A/μs] TVJ [°C] Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ 40 2 200 400 0 600 -diF /dt [A/μs] Fig. 6 Typ. forward recovery voltage VFR & time tfr versus diF /dt Fig. 5 Typ. reverse recov.time trr versus -diF /dt 1.2 TVJ = 125°C VR = 200 V 60 A 1.0 30 30 A 0.8 Erec 15 A 20 [μJ] ZthJC 0.6 [K/W] 0.4 10 0.2 0 0.0 0 200 400 600 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 10 1 10 2 10 3 10 4 t [s] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b