DPG10I200PA

DPG10I200PA HiPerFRED² VRRM = 200 V I FAV = 10 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG10I200PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG10I200PA Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 200 V 200 V VR = 200 V TVJ = 25°C 1 µA VR = 200 V TVJ = 150°C 0.06 mA IF = 10 A TVJ = 25°C 1.27 V IF = 20 A 1.45 V IF = 10 A 0.98 V IF = 20 A TVJ = 150 °C TC = 150 °C rectangular 1.17 V T VJ = 175 °C 10 A TVJ = 175 °C 0.74 V 17.7 mΩ d = 0.5 for power loss calculation only 2.3 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 150 V f = 1 MHz TVJ = 25°C 15 pF TVJ = 25 °C 3 A TVJ = 125 °C 5.5 A TVJ = 25 °C 35 ns TVJ = 125 °C 45 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.5 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 10 A; VR = 130 V -di F /dt = 200 A/µs 65 140 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20200211b DPG10I200PA Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number Logo Date Code Lot # g 0.4 0.6 Nm 20 60 N Part description D P G 10 I 200 PA XXXXXX = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-220AC (2) yywwZ 123456 Location Ordering Standard Ordering Number DPG10I200PA Similar Part DPG10I200PM Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG10I200PA Package TO-220ACFP (2) * on die level Delivery Mode Tube Code No. 506301 Voltage class 200 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.74 V R0 max slope resistance * 14.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG10I200PA Outlines TO-220 A = supplier option H1 ØP D 4 3 L1 1 L 2x b2 2x b C e A2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG10I200PA Fast Diode 30 0.4 12 TVJ = 125°C VR = 130 V 25 20 IF 0.3 TVJ = 25°C 125°C 150°C 20 A Qr 15 10 A 20 A VR = 130 V 10 A 8 5A IRR 0.2 [A] TVJ = 125°C 10 6 5A [μC] [A] 10 4 0.1 5 2 0 0.0 0.0 0.4 0.8 1.2 1.6 2.0 0 0 100 200 300 400 500 0 100 -diF /dt [A/μs] VF [V] Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 300 400 500 Fig. 3 Typ. reverse recovery current IRR versus -diF /dt 80 1.4 200 -diF /dt [A/μs] 12 600 10 500 TVJ = 125°C 1.2 VR = 130 V 60 1.0 8 trr 0.8 Kf IF = 20 A 40 0.6 6 [ns] IRR 10 A [V] 20 Qrr 0.2 2 0.0 0 0 40 80 120 160 TVJ [°C] 100 200 300 400 500 300 [ns] 200 VFR tfr 0 100 200 300 400 100 0 500 -diF /dt [A/μs] -diF /dt [A/μs] Fig. 5 Typ. reverse recov. time trr versus -diF /dt 10 tfr IF = 10 A VR = 130 V 0 0 Fig. 4 Typ. dynamic parameters Qrr, IRR versus TVJ TVJ = 125°C 4 5A 0.4 400 VFR Fig. 6 Typ. forward recovery voltage VFR and tfr versus diF /dt 3 TVJ = 125°C VR = 130 V 8 2 IF = 5 A Erec 6 ZthJH 10 A 20 A [K/W] [μJ] 4 1 2 0 0 100 200 300 400 500 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 0 0.001 0.01 0.1 Rthi [K/W] ti [s] 0.3866 0.7062 0.8127 0.3945 0.0004 0.0025 0.022 0.13 1 10 t [s] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b