DPG10I400PA

DPG10I400PA HiPerFRED VRRM = 400 V I FAV = 10 A t rr = 45 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG10I400PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG10I400PA Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 400 V 400 V VR = 400 V TVJ = 25°C 1 µA VR = 400 V TVJ = 150°C 0.15 mA IF = 10 A TVJ = 25°C 1.32 V IF = 20 A 1.51 V IF = 10 A 1.03 V IF = 20 A TVJ = 150 °C TC = 150 °C rectangular 1.24 V T VJ = 175 °C 10 A TVJ = 175 °C 0.77 V 19.8 mΩ d = 0.5 for power loss calculation only 2.3 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 200 V f = 1 MHz TVJ = 25°C 12 pF TVJ = 25 °C 4 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.5 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 10 A; VR = 270 V -di F /dt = 200 A/µs 65 150 W A TVJ = 125 °C 6 A TVJ = 25 °C 45 ns TVJ = 125 °C 65 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG10I400PA Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number Logo Date Code Lot # g 0.4 0.6 Nm 20 60 N Part description D P G 10 I 400 PA XXXXXX = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-220AC (2) yywwZ 123456 Location Ordering Standard Ordering Number DPG10I400PA Similar Part DPG10I400PM Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG10I400PA Package TO-220ACFP (2) * on die level Delivery Mode Tube Code No. 506654 Voltage class 400 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.77 V R0 max slope resistance * 16.6 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG10I400PA Outlines TO-220 A = supplier option H1 ØP D 4 3 L1 1 L 2x b2 2x b C e A2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG10I400PA Fast Diode 30 0.4 12 TVJ = 125°C VR = 270 V 25 TVJ = 125°C 20 A 20 A VR = 270 V 10 A 10 5A 20 0.3 10 A Qrr IF IRM 8 15 [μC] TVJ = 125°C [A] 10 5A 0.2 [A] 6 TVJ = 25°C 4 5 0 0.0 0.1 0.4 0.8 1.2 1.6 2.0 2 0 100 200 300 400 500 0 Fig. 1 Forward current IF versus VF trr 60 300 10 250 5A VFR 8 200 [V] tfr 6 150 [ns] VFR 4 40 100 tfr Qrr 2 0.0 20 0 IF = 10 A VR = 270 V 10 A [ns] 0.4 0.2 350 12 VR = 270 V 80 IRM 500 TVJ = 125°C TVJ = 125°C IF = 20 A 0.8 400 14 1.2 Kf 300 Fig. 3 Typ. reverse recov. current IRM versus -diF /dt 100 1.0 200 -diF/dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 1.4 0.6 100 -diF /dt [A/μs] VF [V] 40 80 120 160 0 0 TVJ [°C] 100 200 300 400 500 0 Fig. 5 Typ. reverse recov. time trr versus -diF /dt 25 100 200 300 400 0 500 -diF /dt [A/μs] -diF /dt [A/μs] Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ 50 Fig. 6 Typ. forward recovery voltage VFR and tfr versus diF /dt 3 TVJ = 125°C VR = 270 V 20 2 15 ZthJC IF = 5 A Erec 10 A 20 A 10 [μJ] [K/W] 1 5 0 0 0 100 200 300 400 500 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b