DPG120C300QB

DPG120C300QB HiPerFRED² VRRM = I FAV = 2x 60 A t rr = 35 ns 300 V High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG120C300QB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-3P ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline compatible with TO-247 ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG120C300QB Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop min. typ. 300 TVJ = 25°C 1 µA VR = 300 V TVJ = 150°C 0.35 mA IF = TVJ = 25°C 1.40 V 1.72 V 1.10 V IF = 60 A TVJ = 125 °C 60 A I F = 120 A average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case V VR = 300 V I F = 120 A I FAV max. Unit 300 V TC = 130 °C rectangular 1.45 V T VJ = 175 °C 60 A TVJ = 175 °C 0.69 V 5.8 mΩ d = 0.5 for power loss calculation only 0.55 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 150 V f = 1 MHz TVJ = 25°C 80 pF TVJ = 25 °C 3.5 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.3 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 60 A; VR = 200 V -di F /dt = 200 A/µs 275 450 W A TVJ = 125 °C 9 A TVJ = 25 °C 35 ns TVJ = 125 °C 65 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG120C300QB Package Ratings TO-3P Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 °C -55 150 °C 150 °C 1) 5 Weight MD mounting torque FC mounting force with clip Product Marking Logo Part Number Date Code Lot# g 0.8 1.2 Nm 20 120 N Part description D P G 120 C 300 QB IXYS yywwZ = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-3P (3) 1234 Location Ordering Standard Ordering Number DPG120C300QB Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG120C300QB * on die level Delivery Mode Tube Code No. 503821 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.69 V R0 max slope resistance * 3.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG120C300QB Outlines TO-3P 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG120C300QB Fast Diode 120 0.7 20 18 100 IF = 120 A 60 A 30 A 0.6 80 Qrr 0.5 IF IF = 120 A 60 A 30 A 16 IRM 60 14 12 [A] [μC] 0.4 40 [A] 10 TVJ = 150°C 8 0.3 20 TVJ = 125°C VR = 200 V 25°C 0.0 0.4 0.8 1.2 1.6 0.2 100 2.0 VF [V] Fig. 1 Forward current IF versus VF 4 200 300 400 500 0 1000 TVJ = 125°C VR = 200 V 70 800 1.0 Kf 0.8 [ns] IF = 120 A 60 A 30 A 0.6 50 IRM 0.4 Qrr 0.2 0 80 120 160 TVJ [°C] 200 400 16 8 600 6 [ns] 500 5 400 4 300 3 600 VFR [V] 0 200 400 2 600 -diF /dt [A/μs] -diF /dt [A/μs] Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ VFR 200 0 9 7 40 40 10 700 tfr 60 600 TVJ = 125°C VR = 200 V IF = 60 A tfr 900 trr 400 Fig. 3 Typ. reverse recov. current IRM versus -diF /dt 80 1.2 200 -diF /dt [A/μs] -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 1.4 TVJ = 125°C VR = 200 V 6 Fig. 6 Typ. forward recov. voltage VFR & time tfr versus diF /dt Fig. 5 Typ. reverse recov. time trr versus -diF /dt 1.0 IF = 120 A 60 A 30 A 12 ZthJC Erec 8 [K/W] [μJ] 4 TVJ = 125°C VR = 200 V 100 200 300 400 500 0.1 10 0 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 10 1 102 10 3 10 4 t [ms] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b