DPG15I400PM

DPG15I400PM HiPerFRED² VRRM = 400 V I FAV = 15 A t rr = 45 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG15I400PM Backside: isolated 3 1 Features / Advantages: Applications: Package: TO-220FP ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 2500 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Base plate: Plastic overmolded tab ● Reduced weight Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG15I400PM Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 400 V 400 V VR = 400 V TVJ = 25°C 1 µA VR = 400 V TVJ = 150°C 0.18 mA IF = 15 A TVJ = 25°C 1.39 V IF = 30 A 1.63 V IF = 15 A 1.14 V IF = 30 A TVJ = 150 °C TC = 90 °C rectangular 1.40 V T VJ = 175 °C 15 A TVJ = 175 °C 0.84 V 16.5 mΩ d = 0.5 for power loss calculation only 4.2 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 200 V f = 1 MHz TVJ = 25°C 16 pF TVJ = 25 °C 4 A TVJ = 125 °C 5.5 A TVJ = 25 °C 45 ns TVJ = 125 °C 70 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.5 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 15 A; VR = 270 V -di F /dt = 200 A/µs 35 190 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20200211b DPG15I400PM Package Ratings TO-220FP Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip d Spp/App d Spb/Apb VISOL terminal to terminal 3.2 terminal to backside 2.5 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute Product Marking Part Number Logo DateCode Lot# 50/60 Hz, RMS; IISOL ≤ 1 mA g 0.4 0.6 Nm 20 60 N 2.7 mm 2.5 mm 2500 V 2100 V Part description D P G 15 I 400 PM XXXXXX = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-220ACFP (2) yywwZ 123456 Location Ordering Standard Ordering Number DPG15I400PM Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG15I400PM * on die level Delivery Mode Tube Code No. 503814 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.84 V R0 max slope resistance * 13.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG15I400PM Outlines TO-220FP A ØP E A1 Q Dim. H D 1 3 L1 A2 d1 L b1 b e c Note: All metal surface are matte pure tin plated except trimmed area. 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved A A1 A2 b b1 c D d1 E e H L L1 ØP Q Millimeters min max 4.50 4.90 2.34 2.74 2.56 2.96 0.70 0.90 1.27 1.47 0.45 0.60 15.67 16.07 0 1.10 9.96 10.36 2.54 BSC 6.48 6.88 12.68 13.28 3.03 3.43 3.08 3.28 3.20 3.40 Inches min max 0.177 0.193 0.092 0.108 0.101 0.117 0.028 0.035 0.050 0.058 0.018 0.024 0.617 0.633 0 0.043 0.392 0.408 0.100 BSC 0.255 0.271 0.499 0.523 0.119 0.135 0.121 0.129 0.126 0.134 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG15I400PM Fast Diode 80 0.4 12 30 A 70 60 0.3 IF = 30 A 10 15 A IF = 15 A IF = 7.5 A IF 50 Qrr 7.5 A 40 [A] IRM 8 0.2 [A] 6 [μC] 30 TVJ = 25°C 150°C 20 0.1 4 TVJ = 125°C 10 TVJ = 125°C VR = 270 V 0 0.0 VR = 270 V 0.0 0.5 1.0 1.5 2.0 2.5 2 0 100 200 300 400 500 600 0 -diF /dt [A/μs] VF [V] Fig. 1 Forward current IF versus VF -diF /dt [A/μs] Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 120 1.4 18 TVJ = 125°C 100 trr Kf IRM 0.6 80 IF = 30 A 0.4 Qrr 0.2 300 10 250 [V] 8 200 6 150 15 A 40 tfr [ns] VFR 4 tfr 7.5 A 2 0.0 20 0 40 80 120 160 TVJ [°C] 100 200 300 400 500 600 0 Fig. 5 Typ. recovery time trr versus -diF /dt 25 0 100 200 300 400 500 600 -diF /dt [A/μs] -diF /dt [A/μs] Fig. 4 Dynamic parameters Qrr, IRM versus TVJ 100 50 0 0 350 12 VFR [ns] 60 400 IF = 15 A VR = 270 V 14 1.0 450 TVJ = 125°C 16 VR = 270 V 1.2 0.8 100 200 300 400 500 600 Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 4 TVJ = 125°C VR = 270 V 20 3 IF = 30 A Erec 15 IF = 15 A ZthJC 2 IF = 7.5 A [μJ] 10 [K/W] 1 5 0 0 100 200 300 400 500 600 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 0 0.001 0.01 0.1 1 10 t [s] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b