DPG30C200HB
HiPerFRED²
VRRM
=
I FAV
= 2x
15 A
t rr
=
35 ns
200 V
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG30C200HB
Backside: cathode
1
2
3
Features / Advantages:
Applications:
Package: TO-247
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200211b
DPG30C200HB
Ratings
Fast Diode
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
IR
reverse current, drain current
VF
forward voltage drop
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
min.
typ.
max. Unit
200
V
200
V
VR = 200 V
TVJ = 25°C
1
µA
VR = 200 V
TVJ = 150°C
0.08
mA
IF =
15 A
TVJ = 25°C
1.25
V
IF =
30 A
1.50
V
IF =
15 A
1.00
V
IF =
30 A
TVJ = 150 °C
TC = 145 °C
rectangular
1.27
V
T VJ = 175 °C
15
A
TVJ = 175 °C
0.69
V
17.3
mΩ
d = 0.5
for power loss calculation only
1.7 K/W
K/W
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
VR = 150 V f = 1 MHz
TVJ = 25°C
20
pF
TVJ = 25 °C
3
A
TVJ = 125 °C
6.5
A
TVJ = 25 °C
35
ns
TVJ = 125 °C
55
ns
CJ
junction capacitance
I RM
max. reverse recovery current
t rr
reverse recovery time
0.3
TC = 25°C
IF =
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
15 A; VR = 130 V
-di F /dt = 200 A/µs
90
240
Data according to IEC 60747and per semiconductor unless otherwise specified
W
A
20200211b
DPG30C200HB
Package
Ratings
TO-247
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-55
typ.
max.
50
Unit
A
-55
175
°C
-55
150
°C
150
°C
1)
6
Weight
MD
mounting torque
FC
mounting force with clip
Product Marking
0.8
1.2
Nm
20
120
N
Part description
D
P
G
30
C
200
HB
IXYS
Logo
g
=
=
=
=
=
=
=
Diode
HiPerFRED
extreme fast
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-247AD (3)
XXXXXXXXX
Part Number
Date Code
yywwZ
1234
Lot#
Location
Ordering
Standard
Ordering Number
DPG30C200HB
Similar Part
DPG30C200PB
DPG30C200PC
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
DPG30C200HB
Package
TO-220AB (3)
TO-263AB (D2Pak) (2)
* on die level
Delivery Mode
Tube
Code No.
505797
Voltage class
200
200
T VJ = 175°C
Fast
Diode
V 0 max
threshold voltage
0.69
V
R0 max
slope resistance *
14.7
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Quantity
30
Data according to IEC 60747and per semiconductor unless otherwise specified
20200211b
DPG30C200HB
Outlines TO-247
A
E
A2
Ø P1
ØP
D2
S
Q
D1
D
2x E2
4
1
2
3
L1
E1
L
2x b2
3x b
b4
C
A1
2x e
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
2
Sym.
Inches
min.
max.
Millimeter
min.
max.
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.215 BSC
0.780 0.800
0.177
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
0.020 0.053
0.530
0.29
4.70
5.30
2.21
2.59
1.50
2.49
20.79 21.45
15.48 16.24
4.31
5.48
5.46 BSC
19.80 20.30
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
0.51
1.35
13.45
7.39
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20200211b
DPG30C200HB
Fast Diode
80
0.5
16
TVJ = 125°C
30 A
VR = 130 V
IF = 15 A
0.4
60
IF
12
IRM 10
0.3
40
7.5 A
[μC]
[A]
IF = 7.5 A
15 A
Qrr
TVJ = 25°C
150°C
IF = 30 A
14
8
[A]
0.2
6
20
4
0.1
TVJ = 125°C
2
0
0.0
0.0
0.5
1.0
1.5
2.0
VR = 130 V
0
2.5
0
VF [V]
100 200 300 400 500 600
0
-diF /dt [A/μs]
-diF/dt [A/μs]
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
Fig. 1 Forward current
IF versus VF
1.4
100 200 300 400 500 600
70
16
400
TVJ = 125°C
14
VR = 130 V
1.2
60
trr
Kf
0.6
IF = 30 A
50
IRM
[ns] 40
Qrr
30
[V]
15 A
20 40 60 80 100 120 140 160
100 200 300 400 500 600
0
100
0
100 200 300 400 500 600
-diF /dt [A/μs]
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
tfr
VFR
0
0
TVJ [°C]
-diF /dt [A/μs]
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
Fig. 5 Typ. recovery time
trr versus -diF /dt
1.8
16
14
1.6
12
[μJ]
[ns]
6
4
7.5 A
20
0
tfr
200
2
0.0
Erec
VFR 10
300
8
0.4
0.2
IF = 15 A
VR = 130 V
12
1.0
0.8
TVJ = 125°C
IF = 30 A
1.4
IF = 15 A
10
ZthJC
IF = 7.5 A
8
1.2
[K/W]
1.0
6
4
0.8
TVJ = 125°C
2
VR = 130 V
0.6
0
0
100 200 300 400 500 600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
1
10
100
1000
10000
t [ms]
Fig. 8 Transient thermal resistance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20200211b
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