DPG30C300PC

DPG30C300PC HiPerFRED VRRM = 300 V I FAV = 2x 15 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG30C300PC Marking on Product: DPG30C300PC Backside: cathode 1 4 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a DPG30C300PC Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 300 V 300 V VR = 300 V TVJ = 25°C 1 µA VR = 300 V TVJ = 150°C 0.08 mA IF = 15 A TVJ = 25°C 1.26 V IF = 30 A 1.51 V IF = 15 A 1.01 V IF = 30 A TVJ = 150 °C TC = 145 °C rectangular 1.29 V T VJ = 175 °C 15 A TVJ = 175 °C 0.69 V 18 mΩ d = 0.5 for power loss calculation only 1.7 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 150 V f = 1 MHz TVJ = 25°C 20 pF TVJ = 25 °C 3 A TVJ = 125 °C 6.5 A TVJ = 25 °C 35 ns TVJ = 125 °C 55 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.25 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 15 A; VR = 200 V -di F /dt = 200 A/µs 90 240 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20190212a DPG30C300PC Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1.5 Weight FC 20 mounting force with clip Product Marking D P G 30 C 300 PC IXYS yywwZ Logo Date Code Location 60 N Part description XXXXXXXXX Part Number g = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-263AB (D2Pak) (2) 123456 Lot# Ordering Standard Alternative Ordering Number DPG30C300PC-TRL DPG30C300PC-TUB Similar Part DPG30C300PB DPG30C300HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG30C300PC DPG30C300PC Package TO-220AB (3) TO-247AD (3) * on die level Delivery Mode Tape & Reel Tube Code No. 501901 525106 Voltage class 300 300 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.69 V R0 max slope resistance * 14.7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 800 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a DPG30C300PC Outlines TO-263 (D2Pak) Dim. W A A1 H D E Supplier Option D1 L1 c2 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 9.02 (0.355) W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 4 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a DPG30C300PC Fast Diode 80 0.5 16 TVJ = 125°C 70 IF = 30 A 14 IF = 15 A 0.4 60 IF 30 A VR = 200 V 12 50 IRM 10 0.3 [μC] 40 7.5 A 8 [A] [A] 0.2 30 IF = 7.5 A 15 A Qrr TVJ = 25°C 150°C 6 20 4 0.1 10 TVJ = 125°C 2 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 0 VF [V] Fig. 1 Forward current IF versus VF 1.4 VR = 200 V 100 200 300 400 500 600 0 100 200 300 400 500 600 -diF /dt [A/μs] -diF /dt [A/μs] Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -diF /dt 70 16 400 TVJ = 125°C 14 VR = 200 V 1.2 TVJ = 125°C 60 IF = 15 A VR = 200 V 12 1.0 0.8 trr Kf IF = 30 A 50 VFR 10 300 tfr 8 0.6 IRM [ns] 40 Qrr 30 6 15 A 0.4 0.2 [ns] 4 7.5 A 20 20 40 60 80 100 120 140 160 TVJ [°C] Fig. 4 Dynamic parameters Qrr, IRM versus TVJ 16 0 0 100 200 300 400 500 600 0 -diF /dt [A/μs] tfr VFR 2 0.0 0 200 [V] 100 0 100 200 300 400 500 600 -diF /dt [A/μs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 1.8 1.6 12 IF = 30 A 1.4 IF = 15 A Erec ZthJC IF = 7.5 A 8 1.2 [K/W] [μJ] 1.0 4 0.8 TVJ = 125°C VR = 200 V 0.6 0 0 100 200 300 400 500 600 -diF/dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20190212a