DPG30C400HB

DPG30C400HB HiPerFRED² VRRM = I FAV = 2x 15 A t rr = 45 ns 400 V High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG30C400HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG30C400HB Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 400 V 400 V VR = 400 V TVJ = 25°C 1 µA VR = 400 V TVJ = 150°C 0.18 mA IF = 15 A TVJ = 25°C 1.38 V IF = 30 A 1.61 V IF = 15 A 1.13 V IF = 30 A TVJ = 150 °C TC = 140 °C rectangular 1.39 V T VJ = 175 °C 15 A TVJ = 175 °C 0.84 V 15.9 mΩ d = 0.5 for power loss calculation only 1.7 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 200 V f = 1 MHz TVJ = 25°C 16 pF TVJ = 25 °C 4 A TVJ = 125 °C 5.5 A TVJ = 25 °C 45 ns TVJ = 125 °C 70 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.3 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 15 A; VR = 270 V -di F /dt = 200 A/µs 90 190 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20200211b DPG30C400HB Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1) 6 Weight MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part description D P G 30 C 400 HB IXYS Logo g = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DPG30C400HB Similar Part DPG30C400PB Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG30C400HB Package TO-220AB (3) * on die level Delivery Mode Tube Code No. 505790 Voltage class 400 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.84 V R0 max slope resistance * 13.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG30C400HB Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b b4 C A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG30C400HB Fast Diode 80 0.4 15 A 0.3 50 Qrr 7.5 A 40 0.2 [A] IF = 15 A 10 IF = 7.5 A IRM 8 [A] 6 [μC] 30 TVJ = 25°C 150°C 20 12 IF = 30 A VR = 270 V 60 IF 30 A TVJ = 125°C 70 4 0.1 2 10 TVJ = 125°C VR = 270 V 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 0 VF [V] 100 200 300 400 500 600 0 Fig. 1 Forward current IF versus VF -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -diF /dt 120 1.4 18 TVJ = 125°C 100 0.8 trr IRM 0.6 80 IF = 30 A 300 10 250 [V] 8 200 tfr [ns] 6 0.4 0.2 15 A 40 Qrr 0.0 40 80 120 160 TVJ [°C] 2 25 100 200 300 400 500 600 100 50 0 0 100 200 300 400 500 600 -diF /dt [A/μs] -diF /dt [A/μs] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ tfr 0 0 150 VFR 4 7.5 A 20 0 350 12 VFR [ns] 60 400 IF = 15 A VR = 270 V 14 1.0 450 TVJ = 125°C 16 VR = 270 V 1.2 Kf 100 200 300 400 500 600 -diF /dt [A/μs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 2.0 TVJ = 125°C VR = 270 V 20 1.6 Erec IF = 30 A 15 IF = 15 A IF = 7.5 A [μJ] ZthJC 1.2 [K/W] 10 0.8 5 0.4 0 0.0 0 100 200 300 400 500 600 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b