DPG30I400HA
HiPerFRED
VRRM
=
400 V
I FAV
=
30 A
t rr
=
45 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPG30I400HA
Backside: cathode
3
1
Features / Advantages:
Applications:
Package: TO-247
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200211b
DPG30I400HA
Ratings
Fast Diode
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
IR
reverse current, drain current
VF
forward voltage drop
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
min.
typ.
max. Unit
400
V
400
V
VR = 400 V
TVJ = 25°C
1
µA
VR = 400 V
TVJ = 150°C
0.2
mA
IF =
30 A
TVJ = 25°C
1.41
V
IF =
60 A
1.69
V
IF =
30 A
1.13
V
IF =
60 A
TVJ = 150 °C
TC = 135 °C
rectangular
1.46
V
T VJ = 175 °C
30
A
TVJ = 175 °C
0.76
V
10.7
mΩ
d = 0.5
for power loss calculation only
0.95 K/W
K/W
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
VR = 200 V f = 1 MHz
TVJ = 25°C
32
pF
TVJ = 25 °C
4
A
TVJ = 125 °C
8.5
A
TVJ = 25 °C
45
ns
TVJ = 125 °C
85
ns
CJ
junction capacitance
I RM
max. reverse recovery current
t rr
reverse recovery time
0.3
TC = 25°C
IF =
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
30 A; VR = 270 V
-di F /dt = 200 A/µs
160
360
Data according to IEC 60747and per semiconductor unless otherwise specified
W
A
20200211b
DPG30I400HA
Package
Ratings
TO-247
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-55
typ.
max.
50
Unit
A
-55
175
°C
-55
150
°C
150
°C
6
Weight
MD
mounting torque
FC
mounting force with clip
Product Marking
0.8
1.2
Nm
20
120
N
Part description
D
P
G
30
I
400
HA
IXYS
Logo
g
=
=
=
=
=
=
=
Diode
HiPerFRED
extreme fast
Current Rating [A]
Single Diode
Reverse Voltage [V]
TO-247AD (2)
XXXXXXXXX
Part Number
Date Code
yywwZ
1234
Lot#
Location
Ordering
Standard
Ordering Number
DPG30I400HA
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
DPG30I400HA
* on die level
Delivery Mode
Tube
Code No.
507320
T VJ = 175°C
Fast
Diode
V 0 max
threshold voltage
0.76
V
R0 max
slope resistance *
8.1
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Quantity
30
Data according to IEC 60747and per semiconductor unless otherwise specified
20200211b
DPG30I400HA
Outlines TO-247
A
E
A2
D2
Ø P1
ØP
S
Q
D1
D
2x E2
4
1
2
3
L1
E1
L
2x b2
2x b
e
C
A1
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Sym.
Inches
min.
max.
Millimeter
min.
max.
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
Ø P1
0.185 0.209
0.087 0.102
0.059 0.098
0.819 0.845
0.610 0.640
0.170 0.216
0.430 BSC
0.780 0.800
0.177
0.140 0.144
0.212 0.244
0.242 BSC
0.039 0.055
0.065 0.094
0.102 0.135
0.015 0.035
0.515
0.020 0.053
0.530
0.29
4.70
5.30
2.21
2.59
1.50
2.49
20.79 21.45
15.48 16.24
4.31
5.48
10.92 BSC
19.80 20.30
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
0.51
1.35
13.45
7.39
1
Data according to IEC 60747and per semiconductor unless otherwise specified
20200211b
DPG30I400HA
Fast Diode
1.0
80
60 A
TVJ = 125°C
VR = 270 V
70
30 A
0.8
60
30 A
50
IF
60 A
TVJ = 125°C
20 V = 270 V
R
Qrr
TVJ = 150°C
IRR
0.6
40
15 A
[μC]
[A] 30
12
[A]
0.4
20
15 A
16
8
25°C
10
0.2
0.0
0.4
0.8
1.2
1.6
4
0
2.0
VF [V]
Fig. 1 Forward current
IF versus VF
200
400
600
0
1.6
140
400
600
700
TVJ = 125°C
VR = 270 V
1.4
16
tfr
600
120
1.2
TVJ = 125°C
VR = 270 V
IF = 30 A
VFR
14
500
12
100
tfr 400
10
[ns] 80
[ns] 300
8
15 A
30 A
200
6
60 A
100
4
1.0
trr
Kf 0.8
200
-diF /dt [A/μs]
Fig. 3 Typ. reverse recovery current
IRR versus -diF /dt
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
VFR
0.6
IRR
[V]
0.4
60
Qrr
0.2
0.0
40
0
40
80
120
160
0
0
Fig. 4 Typ. dynamic parameters
Qrr, IRR versus TVJ
60 A
TVJ = 125°C
VR = 270 V
40
400
600
0
400
2
600
Fig. 6 Typ. forward recov. voltage
VFR & time tfr versus diF /dt
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
1.0
30 A
0.8
15 A
ZthJC 0.6
30
200
-diF /dt [A/μs]
-diF /dt [A/μs]
TVJ [°C]
50
200
Erec
[K/W] 0.4
20
[μJ]
10
0.2
0
0.0
0
200
400
600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
1
10
100
1000
1000 0
t [ms]
Fig. 8 Transient thermal impedance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20200211b
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