DPG60C200QB

DPG60C200QB HiPerFRED² VRRM = I FAV = 2x 30 A t rr = 35 ns 200 V High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG60C200QB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-3P ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline compatible with TO-247 ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60C200QB Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 200 V 200 V VR = 200 V TVJ = 25°C 1 µA VR = 200 V TVJ = 150°C 0.1 mA IF = 30 A TVJ = 25°C 1.34 V IF = 60 A 1.63 V IF = 30 A 1.06 V IF = 60 A TVJ = 150 °C TC = 140 °C rectangular 1.39 V T VJ = 175 °C 30 A TVJ = 175 °C 0.70 V 10.5 mΩ d = 0.5 for power loss calculation only 0.95 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 150 V f = 1 MHz TVJ = 25°C 42 pF TVJ = 25 °C 3 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.3 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 30 A; VR = 130 V -di F /dt = 200 A/µs 160 360 W A TVJ = 125 °C 7 A TVJ = 25 °C 35 ns TVJ = 125 °C 55 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60C200QB Package Ratings TO-3P Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 °C -55 150 °C 150 °C 1) 5 Weight MD mounting torque FC mounting force with clip Product Marking Logo Part Number Date Code Lot# g 0.8 1.2 Nm 20 120 N Part description D P G 60 C 200 QB IXYS yywwZ = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-3P (3) 1234 Location Ordering Standard Ordering Number DPG60C200QB Similar Part DPG60C200HB DPF60C200HB DPF60C200HJ Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG60C200QB Package TO-247AD (3) TO-247AD (3) ISOPLUS247 (3) * on die level Delivery Mode Tube Code No. 502213 Voltage class 200 200 200 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.7 V R0 max slope resistance * 7.9 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60C200QB Outlines TO-3P 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c DPG60C200QB Fast Diode 16 80 70 0.4 14 IF = 60 A 30 A 15 A 60 IF 50 TVJ = 150°C [A] 12 0.3 Qrr 40 IF = 60 A 30 A 15 A IRM 10 8 30 [A] [μC] 0.2 20 6 25°C TVJ = 125°C VR = 130 V 10 0.1 0.0 0.4 0.8 1.2 1.6 2 0 2.0 TVJ = 125°C VR = 130 V 4 VF [V] 200 400 600 0 200 -diF /dt [A/μs] Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 1.4 400 Fig. 3 Typ. reverse recov. current IRM versus -diF /dt 70 600 TVJ = 125°C VR = 130 V 1.2 600 -diF /dt [A/μs] VFR tfr 12 500 10 400 8 300 6 60 1.0 Kf 0.8 0.6 50 I = 60 A F [ns] 30 A 15 A IRM VFR tfr trr [V] [ns] 200 4 40 0.4 TVJ = 125°C VR = 130 V IF = 30 A 100 Qrr 0.2 0 30 40 80 120 160 0 0 200 400 600 TVJ [°C] -diF /dt [A/μs] Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ Fig. 5 Typ. reverse recov. time trr versus -diF /dt 14 0 200 0 600 400 -diF /dt [A/μs] Fig. 6 Typ. forward recov. voltage VFR and tfr versus diF /dt 1.0 TVJ = 125°C VR = 130 V 12 2 0.8 10 IF = 15 A Erec 8 0.6 30 A 60 A ZthJC [μJ] 6 0.4 [K/W] 4 0.2 2 0.0 0 200 400 600 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 10 100 Rthi [K/W] ti [s] 0.1311 0.1377 0.3468 0.2394 0.095 0.0018 0.002 0.012 0.07 0.345 1000 10000 t [ms] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200211c