DPG60C300HJ

DPG60C300HJ HiPerFRED² VRRM = I FAV = 2x 30 A t rr = 35 ns 300 V High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG60C300HJ Backside: isolated 1 2 3 Features / Advantages: Applications: Package: ISOPLUS247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG60C300HJ Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 300 V 300 V VR = 300 V TVJ = 25°C 1 µA VR = 300 V TVJ = 150°C 0.2 mA IF = 30 A TVJ = 25°C 1.26 V IF = 60 A 1.54 V IF = 30 A 0.96 V IF = 60 A TVJ = 150 °C TC = 140 °C rectangular 1.26 V T VJ = 175 °C 30 A TVJ = 175 °C 0.61 V 9.6 mΩ d = 0.5 for power loss calculation only 1.05 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 150 V f = 1 MHz TVJ = 25°C 60 pF TVJ = 25 °C 3 A TVJ = 125 °C 8.5 A TVJ = 25 °C 35 ns TVJ = 125 °C 65 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.3 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 30 A; VR = 200 V -di F /dt = 200 A/µs 145 450 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20200211b DPG60C300HJ Package Ratings ISOPLUS247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 °C -55 150 °C 150 °C 1) 6 Weight FC 20 mounting force with clip d Spp/App VISOL t = 1 minute Product Marking mm terminal to backside 4.1 mm 3600 V 3000 V 50/60 Hz, RMS; IISOL ≤ 1 mA Part description D P G 60 C 300 HJ IXYS Logo N 2.7 t = 1 second isolation voltage 120 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] ISOPLUS247 (3) ISOPLUS® XXXXXXXXX yywwZ Part Number Date Code 1234 Lot# Location Ordering Standard Ordering Number DPG60C300HJ Similar Part DPG60C300HB DPG60C300QB DPG60C300PC DPF60C300HB Package TO-247AD (3) TO-3P (3) TO-263AB (D2Pak) (2) TO-247AD (3) DPG80C300HB TO-247AD (3) Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tube Quantity 30 Code No. 505494 Voltage class 300 300 300 300 300 T VJ = 175°C Fast Diode V 0 max threshold voltage 0.61 R0 max slope resistance * 7 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product DPG60C300HJ V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG60C300HJ Outlines ISOPLUS247 A2 E1 E D2 A Q Dim. D D3 D1 R A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W 2 3 L L1 1 2x b2 3x b A1 Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD gemäß JEDEC außer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. W 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Inches min max 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.087 0.115 0.128 0.024 0.033 0.819 0.840 0.620 0.640 0.065 0.085 0.799 0.815 0.620 0.635 0.520 0.540 0.215 BSC 0.780 0.811 0.150 0.172 0.220 0.244 0.167 0.217 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side 2x e c b4 Millimeter min max 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.24 0.61 0.83 20.80 21.34 15.75 16.26 1.65 2.15 20.30 20.70 15.75 16.13 13.21 13.72 5.45 BSC 19.81 20.60 3.81 4.38 5.59 6.20 4.25 5.50 0.10 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b DPG60C300HJ Fast Diode 0.6 80 18 70 60 IF 50 Qrr 16 0.5 IF = 60 A 30 A 15 A 0.4 12 IRM 40 [A] TVJ = 150°C 10 [μC] 0.3 30 IF = 60 A 30 A 15 A 14 [A] 8 20 0.2 25°C TVJ = 125°C 10 TVJ = 125°C 6 VR = 200 V VR = 200 V 0.1 0.0 0.4 0.8 1.2 1.6 4 0 2.0 VF [V] Fig. 1 Forward current IF versus VF 200 400 600 0 -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 1.4 200 400 80 700 VFR TVJ = 125°C VR = 200 V 1.2 600 -diF /dt [A/μs] Fig. 3 Typ. reverse recov. current IRM versus -diF /dt tfr 600 7 6 70 1.0 500 tfr trr 60 Kf 0.8 5 TVJ = 125°C VR = 200 V IF = 30 A 400 [ns] [ns] 0.6 IRM IF = 60 A 30 A 15 A 50 0.4 VFR 4 [V] 300 3 200 2 Qrr 0.2 40 0 40 80 120 160 100 0 Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ 8 IF = 60 A 6 30 A 15 A 0 200 400 1 600 -diF /dt [A/μs] Fig. 6 Typ. forward recov. voltage VFR & time tfr versus diF /dt 1.2 VR = 200 V Erec 600 Fig. 5 Typ. reverse recov. time trr versus -diF /dt TVJ = 125°C 10 400 -diF /dt [A/μs] TVJ [°C] 12 200 1.0 0.8 ZthJC 0.6 [μJ] [K/W] 4 0.4 2 0.2 0 0.0 0 200 400 600 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200211b