DPG60C300PC
HiPerFRED
VRRM
=
300 V
I FAV
= 2x
30 A
t rr
=
35 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG60C300PC
Marking on Product: DPG60C300PC
Backside: cathode
1
4
3
Features / Advantages:
Applications:
Package: TO-263 (D2Pak)
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20190212c
DPG60C300PC
Ratings
Fast Diode
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
IR
reverse current, drain current
VF
forward voltage drop
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
min.
typ.
max. Unit
300
V
300
V
VR = 300 V
TVJ = 25°C
1
µA
VR = 300 V
TVJ = 150°C
0.1
mA
IF =
30 A
TVJ = 25°C
1.35
V
IF =
60 A
1.66
V
IF =
30 A
1.08
V
IF =
60 A
TVJ = 150 °C
TC = 140 °C
rectangular
1.43
V
T VJ = 175 °C
30
A
TVJ = 175 °C
0.70
V
11.1
mΩ
d = 0.5
for power loss calculation only
0.85 K/W
K/W
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
VR = 150 V f = 1 MHz
TVJ = 25°C
42
pF
TVJ = 25 °C
3
A
CJ
junction capacitance
I RM
max. reverse recovery current
t rr
reverse recovery time
0.25
TC = 25°C
IF =
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
30 A; VR = 200 V
-di F /dt = 200 A/µs
175
360
W
A
TVJ = 125 °C
7
A
TVJ = 25 °C
35
ns
TVJ = 125 °C
55
ns
Data according to IEC 60747and per semiconductor unless otherwise specified
20190212c
DPG60C300PC
Package
Ratings
TO-263 (D2Pak)
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-55
typ.
max.
35
Unit
A
-55
175
°C
-55
150
°C
150
°C
1.5
Weight
FC
20
mounting force with clip
Product Marking
D
P
G
60
C
300
PC
IXYS yywwZ
Logo
Date Code
Location
60
N
Part description
XXXXXXXXX
Part Number
g
=
=
=
=
=
=
=
Diode
HiPerFRED
extreme fast
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-263AB (D2Pak) (2)
123456
Lot#
Ordering
Standard
Alternative
Ordering Number
DPG60C300PC-TRL
DPG60C300PC-TUB
Similar Part
DPG60C300HB
DPG60C300QB
DPG60C300HJ
DPF60C300HB
Package
TO-247AD (3)
TO-3P (3)
ISOPLUS247 (3)
TO-247AD (3)
DPG80C300HB
TO-247AD (3)
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
DPG60C300PC
DPG60C300PC
* on die level
Delivery Mode
Tape & Reel
Tube
Code No.
503494
524929
Voltage class
300
300
300
300
300
T VJ = 175°C
Fast
Diode
V 0 max
threshold voltage
0.7
V
R0 max
slope resistance *
7.8
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Quantity
800
50
Data according to IEC 60747and per semiconductor unless otherwise specified
20190212c
DPG60C300PC
Outlines TO-263 (D2Pak)
Dim.
W
A
A1
H
D
E
Supplier
Option
D1
L1
c2
4
L
L2
1 2 3
c
2x e
3x b2
10.92
(0.430)
mm (Inches)
2x b
E1
9.02
(0.355)
W
Inches
min
max
0.160 0.190
typ. 0.004
0.095
0.020 0.039
0.045 0.055
0.016 0.029
0.045 0.055
0.330 0.370
0.315 0.350
0.098
0.380 0.410
0.245 0.335
0,100 BSC
0.169
0.575 0.625
0.070 0.110
0.040 0.066
typ.
0.002
0.0008
All dimensions conform with
and/or within JEDEC standard.
1.78
(0.07)
3.05
(0.120)
3.81
(0.150)
A
A1
A2
b
b2
c
c2
D
D1
D2
E
E1
e
e1
H
L
L1
Millimeter
min
max
4.06
4.83
typ. 0.10
2.41
0.51
0.99
1.14
1.40
0.40
0.74
1.14
1.40
8.38
9.40
8.00
8.89
2.5
9.65
10.41
6.22
8.50
2,54 BSC
4.28
14.61 15.88
1.78
2.79
1.02
1.68
typ.
0.040
0.02
2.54 (0.100)
Recommended min. foot print
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
4
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20190212c
DPG60C300PC
Fast Diode
16
80
0.4 IF = 60 A
30 A
15 A
70
60
14
12
0.3
IF
50
TVJ = 150°C
IRM
Qrr
40
[A] 6
[μC]
20
4
0.1
25°C
TVJ = 125°C
VR = 200 V
10
0.0
0.4
0.8
1.2
1.6
0
2.0
VF [V]
200
400
600
0
1.0
Kf 0.8
50
Qrr
500
10
400
8
300
6
VFR
[ns]
80
120
160
TVJ [°C]
200
400
600
0
-diF /dt [A/μs]
2
200
0
600
400
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
16
TVJ = 125°C
VR = 200 V
IF = 30 A
0
0
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
4
100
20
40
[V]
200
30
0.4
12
tfr
IF = 60 A
[ns] 40
30 A
15 A
IRM
VFR
tfr
60
trr
600
600
TVJ = 125°C
VR = 200 V
1.2
400
Fig. 3 Typ. reverse recov. current
IRM versus -diF /dt
70
0
200
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
1.4
0.2
TVJ = 125°C
VR = 200 V
2
-diF /dt [A/μs]
Fig. 1 Forward current
IF versus VF
0.6
10
8
0.2
[A] 30
IF = 60 A
30 A
15 A
Fig. 6 Typ. forward recov. voltage
VFR & tfr versus diF /dt
1
TVJ = 125°C
14
VR = 200 V
12
10
IF = 15 A
8
30 A
60 A
Erec
ZthJC
[μJ] 6
[K/W]
Rthi [K/W]
0.139
0.176
0.305
0.23
4
2
0
200
400
600
0.1
0.001
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
0.01
0.1
ti [s]
0.00028
0.0033
0.028
0.17
1
10
t [s]
Fig. 8 Transient thermal impedance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20190212c
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