DPH30IS600HI

DPH30IS600HI HiPerDynFRED VRRM = 600 V I FAV = 30 A t rr = 35 ns High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode Part number DPH30IS600HI Backside: isolated 1 3 Features / Advantages: Applications: Package: ISOPLUS247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200210c DPH30IS600HI Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 600 V 600 V VR = 600 V TVJ = 25°C 1 µA VR = 600 V TVJ = 150°C 0.2 mA IF = 30 A TVJ = 25°C 2.48 V IF = 60 A 3.02 V IF = 30 A 1.89 V IF = 60 A TVJ = 150 °C TC = 140 °C rectangular 2.45 V T VJ = 175 °C 30 A TVJ = 175 °C 1.10 V 12.6 mΩ d = 0.5 for power loss calculation only 0.55 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 400 V f = 1 MHz TVJ = 25°C 30 pF TVJ = 25 °C 3 A CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.3 TC = 25°C IF = IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 30 A; VR = 400 V -di F /dt = 200 A/µs 285 450 W A TVJ = 125 °C 8 A TVJ = 25 °C 35 ns TVJ = 125 °C 65 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20200210c DPH30IS600HI Package Ratings ISOPLUS247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 °C -55 150 °C 150 °C 6 Weight FC 20 mounting force with clip d Spp/App VISOL t = 1 minute Product Marking mm terminal to backside 4.1 mm 3600 V 3000 V 50/60 Hz, RMS; IISOL ≤ 1 mA Part description D P H 30 IS 600 HI IXYS Logo N 5.4 t = 1 second isolation voltage 120 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g = = = = = = = Diode HiPerFRED HiPerDyn Current Rating [A] Single Diode Reverse Voltage [V] ISOPLUS247 (2) ISOPLUS® XXXXXXXXX yywwZ Part Number Date Code 1234 Lot# Location Ordering Standard Ordering Number DPH30IS600HI Similar Part DHG60I600HA DSEP60-06A DSEP60-06AT Equivalent Circuits for Simulation I V0 R0 Marking on Product DPH30IS600HI Package TO-247AD (2) TO-247AD (2) TO-268AA (D3Pak) (2) * on die level Delivery Mode Tube Code No. 506235 Voltage class 600 600 600 T VJ = 175°C Fast Diode V 0 max threshold voltage 1.1 V R0 max slope resistance * 10 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20200210c DPH30IS600HI Outlines ISOPLUS247 A2 E1 E D2 A Q Dim. D D3 D1 R A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W 2 3 b4 L L1 1 2x b2 c 2x b Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD gemäß JEDEC außer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. W 1 © 2020 IXYS all rights reserved Inches min max 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.087 0.115 0.128 0.024 0.033 0.819 0.840 0.620 0.640 0.065 0.085 0.799 0.815 0.620 0.635 0.520 0.540 0.429 BSC 0.780 0.811 0.150 0.172 0.220 0.244 0.167 0.217 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side e A1 IXYS reserves the right to change limits, conditions and dimensions. Millimeter min max 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.24 0.61 0.83 20.80 21.34 15.75 16.26 1.65 2.15 20.30 20.70 15.75 16.13 13.21 13.72 10.90 BSC 19.81 20.60 3.81 4.38 5.59 6.20 4.25 5.50 0.10 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200210c DPH30IS600HI Fast Diode 80 0.7 20 0.6 60 Qrr IF IRM 0.4 40 TVJ = 150°C [A] IF = 60 A 30 A 15 A 16 IF = 60 A 30 A 15 A 0.5 12 [μC] [A] 0.3 20 8 0.2 25°C 0.1 0.0 0.8 1.6 2.4 3.2 4.0 0 VF [V] Fig. 1 Forward current IF versus VF TVJ = 125°C VR = 400 V TVJ = 125°C VR = 400 V 200 400 4 600 0 -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 1.6 80 1.4 trr tfr 800 0.8 [ns] tfr Kf TVJ = 125°C VR = 400 V IF = 30 A 600 12 VFR [ns] 400 8 200 6 IF = 60 A 30 A 50 15 A IRM VFR 10 60 0.6 600 14 70 1.0 400 1000 TVJ = 125°C VR = 400 V 1.2 200 -diF /dt [A/μs] Fig. 3 Typ. reverse recov. current IRM versus -diF /dt [V] 0.4 Qrr 0.2 0 80 120 160 0 -diF /dt [A/μs] Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ Fig. 5 Typ. reverse recov. time trr versus -diF /dt 400 4 600 -diF /dt [A/μs] Fig. 6 Typ. forward recov. voltage VFR & time tfr versus diF /dt 0.5 IF = 15 A 0.4 30 A 60 A 16 200 0.6 TVJ = 125°C VR = 400 V 20 0 100 200 300 400 500 600 TVJ [°C] 24 Erec 0 40 40 ZthJC 0.3 12 [K/W] [μJ] 8 0.2 4 0.1 0 0.0 0 200 400 600 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 1 10 100 100 0 10000 t [ms] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200210c