DSA10C150PB

DSA10C150PB preliminary Schottky Diode VRRM = I FAV = 2x VF = 150 V 5A 0.71 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA10C150PB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-220 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200128b DSA10C150PB preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 150 IR reverse current, drain current VR = 150 V TVJ = 25°C 100 µA VR = 150 V TVJ = 125°C 0.9 mA IF = 5A TVJ = 25°C 0.86 V IF = 10 A 0.93 V IF = 5A 0.71 V IF = 10 A VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. TVJ = 125 °C TC = 160 °C rectangular V 0.81 V T VJ = 175 °C 5 A TVJ = 175 °C 0.54 V 19.4 mΩ 4.8 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2020 IXYS all rights reserved max. Unit 150 V d = 0.5 for power loss calculation only IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.5 TC = 25°C 24 V f = 1 MHz 30 150 29 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20200128b DSA10C150PB preliminary Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 20 Unit A -55 175 °C -55 150 °C 150 °C 1) 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number Logo Date Code Lot # g 0.4 0.6 Nm 20 60 N Part description D S A 10 C 150 PB XXXXXX = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-220AB (3) yywwZ 123456 Location Ordering Standard Ordering Number DSA10C150PB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA10C150PB * on die level Delivery Mode Tube Code No. 509188 T VJ = 175°C Schottky V 0 max threshold voltage 0.54 V R0 max slope resistance * 16.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20200128b DSA10C150PB preliminary Outlines TO-220 A = supplier option H1 ØP D 4 3 L 3x b2 2 L1 1 3x b C 2x e A2 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200128b