DSA10I100PM

DSA10I100PM preliminary Schottky Diode Gen ² VRRM = 100 V I FAV = 10 A VF = 0.71 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA10I100PM Backside: isolated 3 1 Features / Advantages: Applications: Package: TO-220FP ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Isolation Voltage: 2500 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Base plate: Plastic overmolded tab ● Reduced weight Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b DSA10I100PM preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 100 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. V VR = 100 V TVJ = 25°C 200 µA TVJ = 125°C 2 mA IF = 10 A TVJ = 25°C 0.89 V IF = 20 A 1.04 V IF = 10 A 0.71 V IF = 20 A TVJ = 125 °C TC = 140 °C 0.87 V T VJ = 175 °C 10 A TVJ = 175 °C 0.45 V 16.1 mΩ d = 0.5 for power loss calculation only 4.5 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2020 IXYS all rights reserved max. Unit 100 V VR = 100 V rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.5 TC = 25°C 12 V f = 1 MHz 35 240 96 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20200127b DSA10I100PM preliminary Package Ratings TO-220FP Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip d Spp/App d Spb/Apb VISOL terminal to terminal 3.2 terminal to backside 2.5 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute Product Marking Part Number Logo DateCode Lot# 50/60 Hz, RMS; IISOL ≤ 1 mA g 0.4 0.6 Nm 20 60 N 2.7 mm 2.5 mm 2500 V 2100 V Part description D S A 10 I 100 PM XXXXXX = = = = = = = Diode Schottky Diode low VF Current Rating [A] Single Diode Reverse Voltage [V] TO-220ACFP (2) yywwZ 123456 Location Ordering Standard Ordering Number DSA10I100PM Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA10I100PM * on die level Delivery Mode Tube Code No. 503362 T VJ = 175°C Schottky V 0 max threshold voltage 0.45 V R0 max slope resistance * 12.9 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b DSA10I100PM preliminary Outlines TO-220FP A ØP E A1 Q Dim. H D 1 3 L1 A2 d1 L b1 b e c Note: All metal surface are matte pure tin plated except trimmed area. 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved A A1 A2 b b1 c D d1 E e H L L1 ØP Q Millimeters min max 4.50 4.90 2.34 2.74 2.56 2.96 0.70 0.90 1.27 1.47 0.45 0.60 15.67 16.07 0 1.10 9.96 10.36 2.54 BSC 6.48 6.88 12.68 13.28 3.03 3.43 3.08 3.28 3.20 3.40 Inches min max 0.177 0.193 0.092 0.108 0.101 0.117 0.028 0.035 0.050 0.058 0.018 0.024 0.617 0.633 0 0.043 0.392 0.408 0.100 BSC 0.255 0.271 0.499 0.523 0.119 0.135 0.121 0.129 0.126 0.134 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b DSA10I100PM preliminary Schottky 100 20 TVJ = 175°C 10 16 250 150°C TVJ = 150°C 125°C 25°C IF 12 [A] 300 1 200 125°C IR 0.1 100°C [mA] 8 150 [pF] 75°C 0.01 TVJ= 25°C CT 100 50°C 4 0.001 25°C 0 0.0 50 0.0001 0.2 0.4 0.6 0.8 VF [V] 1.0 1.2 0 0 40 80 VR [V] 120 160 Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 1 Maximum forward voltage drop characteristics 0 20 40 60 VR [V] 80 100 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 40 40 30 30 DC IF(AV) [A] P(AV) 20 d= DC 0.5 0.33 0.25 0.17 0.08 20 d = 0.5 [W] 10 10 0 0 0 40 80 120 TC [°C] 160 0 200 10 20 30 40 IF(AV) [A] Fig. 4 Avg: forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 5 4 ZthJC [K/W] 3 2 1 0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b