DSA120C150QB

DSA120C150QB Schottky Diode Gen ² VRRM = I FAV = 2x 60 A VF = 0.8 V 150 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA120C150QB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-3P ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline compatible with TO-247 ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200127c DSA120C150QB Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 150 IR reverse current, drain current VF forward voltage drop min. typ. VR = 150 V TVJ = 25°C 900 µA TVJ = 125°C 5 mA IF = TVJ = 25°C 0.93 V 1.13 V 0.80 V IF = 60 A TVJ = 125 °C 60 A I F = 120 A average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 150 °C rectangular 1.03 V T VJ = 175 °C 60 A TVJ = 175 °C 0.51 V 3.9 mΩ d = 0.5 for power loss calculation only 0.4 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved V VR = 150 V I F = 120 A I FAV max. Unit 150 V K/W 0.3 TC = 25°C 24 V f = 1 MHz 481 Data according to IEC 60747and per semiconductor unless otherwise specified 375 W 1.20 kA pF 20200127c DSA120C150QB Package Ratings TO-3P Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 °C -55 150 °C 150 °C 1) 5 Weight MD mounting torque FC mounting force with clip Product Marking Logo Part Number Date Code Lot# g 0.8 1.2 Nm 20 120 N Part description D S A 120 C 150 QB IXYS yywwZ = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-3P (3) 1234 Location Ordering Standard Ordering Number DSA120C150QB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA120C150QB * on die level Delivery Mode Tube Tube Code No. 501788 T VJ = 175°C Schottky V 0 max threshold voltage 0.51 V R0 max slope resistance * 1.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20200127c DSA120C150QB Outlines TO-3P 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200127c DSA120C150QB Schottky 120 100 100 10 80 1 IF TVJ = 150°C 125°C 25°C [A] 40 TVJ=175°C 150°C IR 60 10000 CT 125°C TVJ = 25°C 1000 [mA] 0.1 [pF] 100°C 75°C 0.01 20 50°C 25°C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 100 50 VF [V] Fig. 1 Max. forward voltage drop characteristics 100 150 0 50 100 150 VR [V] VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 60 80 50 DC 60 d = 0.5 40 IF(AV) P(AV) 40 d= DC 0.5 0.33 0.25 0.17 0.08 30 [A] [W] 20 20 10 0 0 0 50 100 150 200 0 10 20 30 TC [°C] 40 50 60 70 IF(AV) [A] Fig. 5 Forward power loss characteristics Fig. 4 Average forward current IF(AV) vs. case temp TC 0.4 0.3 ZthJC 0.2 Rthi ti 0.022 0.0002 0.082 0.0032 0.104 0.026 0.165 0.208 0.027 0.79 [K/W] 0.1 0.0 0.001 Note: All curves are per diode 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200127c