DSA15IM200UC

DSA15IM200UC Schottky Diode VRRM = 200 V I FAV = 15 A VF = 0.78 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA15IM200UC Marking on Product: SFMAUI Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 (DPak) ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212e DSA15IM200UC Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 200 IR reverse current, drain current VR = 200 V TVJ = 25°C 250 µA VR = 200 V TVJ = 125°C 2.5 mA IF = 15 A TVJ = 25°C 0.94 V IF = 30 A 1.10 V IF = 15 A 0.78 V IF = 30 A VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. TVJ = 125 °C TC = 150 °C rectangular V 0.95 V T VJ = 175 °C 15 A TVJ = 175 °C 0.53 V 10.8 mΩ 2 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2019 IXYS all rights reserved max. Unit 200 V d = 0.5 for power loss calculation only IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.50 TC = 25°C 24 V f = 1 MHz 75 200 67 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20190212e DSA15IM200UC Package Ratings TO-252 (DPak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 20 Unit A -55 175 °C -55 150 °C 150 °C 0.3 Weight FC 1) typ. 1) 20 mounting force with clip g 60 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking Logo Part number Assembly Line Part description D S A 15 IM 200 UC IXYS abcdefg Z YY = = = = = = = Diode Schottky Diode low VF Current Rating [A] Single Diode Reverse Voltage [V] TO-252AA (DPak) WW Date Code Ordering Standard Alternative Ordering Number DSA15IM200UC-TRL DSA15IM200UC-TUB Similar Part DSB15IM30UC DSA15IM45UC DSA10IM100UC DSA15IM150UC Equivalent Circuits for Simulation I V0 R0 Marking on Product SFMAUI SFMAUI Package TO-252AA (DPak) TO-252AA (DPak) TO-252AA (DPak) TO-252AA (DPak) * on die level Delivery Mode Tape & Reel Tube Code No. 510408 523494 Voltage class 30 45 100 150 T VJ = 175 °C Schottky V 0 max threshold voltage 0.53 V R0 max slope resistance * 7.6 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 2500 70 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212e DSA15IM200UC Outlines TO-252 (DPak) 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 4 Data according to IEC 60747and per semiconductor unless otherwise specified 20190212e DSA15IM200UC Schottky 30 100 250 TVJ = 175°C 24 10 TVJ = 150°C 125°C 25°C IF 18 125°C 1 IR 200 150°C CT 150 TVJ= 25°C 100°C [mA] 0.1 75°C [A] 12 [pF] 100 50°C 6 0.01 0 0.0 0.001 0.2 0.4 0.6 0.8 VF [V] 1.0 1.2 0 0 40 80 VR [V] 120 160 Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 1 Maximum forward voltage drop characteristics 0 50 100 VR [V] 150 200 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 16 24 14 20 DC 12 d = 0.5 16 10 IF(AV) [A] 50 25°C P(AV) d= DC 0.5 0.33 0.25 0.17 0.08 8 12 [W] 6 8 4 4 2 0 0 0 40 80 120 TC [°C] 160 0 200 Fig. 4 Avg: forward current IF(AV) vs. case temperature TC 4 8 12 IF(AV) [A] 16 20 Fig. 5 Forward power loss characteristics 2.4 2.0 1.6 ZthJC 1.2 [K/W] i Rthi (K/W) 1 0.200 2 0.300 3 0.500 4 0.400 5 0.600 0.8 0.4 0.0 0.001 0.01 0.1 1 ti (s) 0.0200 0.0001 0.0035 0.0950 0.1100 10 t [s] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190212e