DSA20C150PN

DSA20C150PN Schottky Diode VRRM = 150 V I FAV = 2x VF = 10 A 0.73 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA20C150PN Backside: isolated 1 2 3 Features / Advantages: Applications: Package: TO-220FP ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Isolation Voltage: 2500 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Base plate: Plastic overmolded tab ● Reduced weight Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210309b DSA20C150PN Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 150 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. V VR = 150 V TVJ = 25°C 200 µA TVJ = 125°C 2 mA IF = 10 A TVJ = 25°C 0.87 V IF = 20 A 0.98 V IF = 10 A 0.73 V IF = 20 A TVJ = 125 °C TC = 140 °C 0.85 V T VJ = 175 °C 10 A TVJ = 175 °C 0.54 V 11.4 mΩ d = 0.5 for power loss calculation only 4.5 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2021 IXYS all rights reserved max. Unit 150 V VR = 150 V rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.5 TC = 25°C 24 V f = 1 MHz 35 220 53 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20210309b DSA20C150PN Package Ratings TO-220FP Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip d Spp/App d Spb/Apb VISOL terminal to terminal 1.6 terminal to backside 2.5 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute Product Marking Part Number Logo DateCode Lot# 50/60 Hz, RMS; IISOL ≤ 1 mA g 0.4 0.6 Nm 20 60 N 1.0 mm 2.5 mm 2500 V 2100 V Part description D S A 20 C 150 PN XXXXXX = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-220ABFP (3) yywwZ 123456 Location Ordering Standard Ordering Number DSA20C150PN Similar Part DSA20C150PB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA20C150PN Package TO-220AB (3) * on die level Delivery Mode Tube Code No. 503682 Voltage class 150 T VJ = 175°C Schottky V 0 max threshold voltage 0.54 V R0 max slope resistance * 8.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20210309b DSA20C150PN Outlines TO-220FP A ØP E A1 Q H Dim. D 1 2 3 L1 A2 L b1 c b e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved 2 A A1 A2 b c D E e H L L1 ØP Q Millimeters min max 4.50 4.90 2.34 2.74 2.56 2.96 0.70 0.90 0.45 0.60 15.67 16.07 9.96 10.36 2.54 BSC 6.48 6.88 12.68 13.28 3.03 3.43 3.08 3.28 3.20 3.40 Inches min max 0.177 0.193 0.092 0.108 0.101 0.117 0.028 0.035 0.018 0.024 0.617 0.633 0.392 0.408 0.100 BSC 0.255 0.271 0.499 0.523 0.119 0.135 0.121 0.129 0.126 0.134 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20210309b DSA20C150PN Schottky 20 250 100 10 15 10 200 150°C TVJ = 150°C 125°C 25°C IF TVJ = 175°C CT 1 125°C IR 150 0.1 100°C [mA] [A] 0.01 TVJ= 25°C [pF] 100 75°C 50°C 5 50 0.001 25°C 0 0.0 0 0.0001 0.2 0.4 0.6 0.8 VF [V] 1.0 1.2 0 Fig. 1 Maximum forward voltage drop characteristics 40 80 VR [V] 120 160 Fig. 2 Typ. reverse current IR vs. reverse voltage VR 0 20 40 60 80 100 120 140 160 VR [V] Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 40 30 30 IF(AV) DC d = 0.5 20 [A] d= DC 0.5 0.33 0.25 0.17 0.08 P(AV) 20 [W] 10 10 0 0 0 40 80 TC [°C] 120 0 160 10 20 30 40 IF(AV) [A] Fig. 4 Avg: forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 10 ZthJC 1 [K/W] 0.1 0.001 0.01 0.1 1 Rthi [K/W] ti [s] 0.35 0.63 0.55 2.26 0.71 0.0003 0.0035 0.0290 1.2000 7.8000 10 100 t [s] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210309b