DSA20C60PN

DSA20C60PN Schottky Diode VRRM = 60 V I FAV = 2x 10 A VF = 0.7 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA20C60PN Backside: isolated 1 2 3 Features / Advantages: Applications: Package: TO-220FP ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Isolation Voltage: 2500 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Base plate: Plastic overmolded tab ● Reduced weight Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191120b DSA20C60PN Ratings Schottky Conditions Symbol VRSM max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 60 IR reverse current, drain current VF Definition forward voltage drop min. V 60 V TVJ = 25°C 200 µA VR = 60 V TVJ = 125°C 2 mA IF = 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 25°C TVJ = 125 °C TC = 140 °C V V 0.70 V 0.86 V 10 A TVJ = 175 °C 0.48 V 13.5 mΩ VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C rectangular 0.86 1.04 T VJ = 175 °C average forward current © 2019 IXYS all rights reserved max. Unit 60 V VR = I FAV d = 0.5 for power loss calculation only IXYS reserves the right to change limits, conditions and dimensions. typ. 4.5 K/W K/W 0.50 TC = 25°C 12 V f = 1 MHz 35 240 149 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20191120b DSA20C60PN Package Ratings TO-220FP Symbol I RMS Definition Conditions RMS current per terminal min. typ. max. 35 Unit A TVJ virtual junction temperature -55 175 °C T op operation temperature -55 150 °C Tstg storage temperature -55 150 °C 2 Weight MD mounting torque FC mounting force with clip d Spp/App d Spb/Apb VISOL terminal to terminal 1.6 terminal to backside 2.5 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute Product Marking Part Number Logo DateCode Lot# 50/60 Hz, RMS; IISOL ≤ 1 mA g 0.4 0.6 Nm 20 60 N 1.0 mm 2.5 mm 2500 V 2100 V Part description D S A 20 C 60 PN XXXXXX = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-220ABFP (3) yywwZ 123456 Location Ordering Standard Ordering Number DSA20C60PN Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA20C60PN * on die level Delivery Mode Tube Code No. 504876 T VJ = 175°C Schottky V 0 max threshold voltage 0.48 V R0 max slope resistance * 10.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20191120b DSA20C60PN Outlines TO-220FP E A ØP A1 Q H Dim. D 1 2 3 L1 A2 L b1 c b e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 2 A A1 A2 b c D E e H L L1 ØP Q Millimeters min max 4.50 4.90 2.34 2.74 2.56 2.96 0.70 0.90 0.45 0.60 15.67 16.07 9.96 10.36 2.54 BSC 6.48 6.88 12.68 13.28 3.03 3.43 3.08 3.28 3.20 3.40 Inches min max 0.177 0.193 0.092 0.108 0.101 0.117 0.028 0.035 0.018 0.024 0.617 0.633 0.392 0.408 0.100 BSC 0.255 0.271 0.499 0.523 0.119 0.135 0.121 0.129 0.126 0.134 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20191120b DSA20C60PN Schottky 20 500 101 TVJ= 25°C 100 TVJ = 150°C 16 TVJ = 150°C 125°C 25°C 12 IF 10-1 IR 400 125°C CT 300 100°C -2 10 8 [A] [pF] 75°C [mA] 200 10-3 50°C 4 10 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF [V] 0 0 10 20 30 40 VR [V] 50 60 70 Fig. 2 Typ. reverse current IR vs. reverse voltage VR 40 36 35 32 0 10 20 30 40 VR [V] 50 60 Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 28 30 [A] 25°C 10-5 Fig. 1 Maximum forward voltage drop characteristics IF(AV) 100 -4 24 P(AV) DC 25 20 [W] d = 0.5 20 d= DC 0.5 0.33 0.25 0.17 0.08 16 15 12 10 8 5 4 0 0 0 40 80 120 TC [°C] 160 0 200 4 8 12 16 20 24 28 32 36 IF(AV) [A] Fig. 4 Avg: forward current IF(AV) Fig. 5 Forward power loss characteristics vs. case temperature TC 10 ZthJC 1 [K/W] 0.1 0.001 0.01 0.1 1 Rthi [K/W] ti [s] 0.35 0.63 0.55 2.26 0.71 0.0003 0.0035 0.0290 1.2000 7.8000 10 100 t [s] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191120b