DSA240X150NA

DSA240X150NA Schottky Diode VRRM = 150 V I FAV = 2x 120 A VF = 0.85 V High Performance Schottky Diode Low Loss and Soft Recovery Parallel legs Part number DSA240X150NA Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200127c DSA240X150NA Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 150 V IR reverse current, drain current VF forward voltage drop min. typ. VR = 150 V TVJ = 25°C 1.5 mA VR = 150 V TVJ = 125°C 15 mA I F = 120 A TVJ = 25°C 0.98 V 1.24 V 0.85 V I F = 240 A TVJ = 125 °C I F = 120 A I F = 240 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 95 °C rectangular 1.15 V T VJ = 150 °C 120 A TVJ = 150 °C 0.51 V 2.5 mΩ d = 0.5 for power loss calculation only 0.4 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved max. Unit 150 V K/W 0.1 TC = 25°C 24 V f = 1 MHz 902 Data according to IEC 60747and per semiconductor unless otherwise specified 310 W 1.60 kA pF 20200127c DSA240X150NA Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App d Spb/Apb VISOL Product Marking Logo XXXXX ® yywwZ 1234 Date Code Location Ordering Standard 8.6 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Part description Part Number UL D S A 240 X 150 NA = = = = = = = Diode Schottky Diode low VF Current Rating [A] Parallel legs Reverse Voltage [V] SOT-227B (minibloc) Lot# Ordering Number DSA240X150NA Similar Part DSS2x101-015A Equivalent Circuits for Simulation V0 10.5 t = 1 second isolation voltage t = 1 minute I terminal to terminal terminal to backside creepage distance on surface | striking distance through air R0 Marking on Product DSA240X150NA Package SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 511101 Voltage class 150 T VJ = 150°C Schottky V 0 max threshold voltage 0.51 V R0 max slope resistance * 0.6 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20200127c DSA240X150NA Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200127c DSA240X150NA Schottky 240 10 TVJ=150°C 200 1 IF [A] 125°C 160 IR 100°C 120 0.1 TVJ = 25°C 125°C 150°C 80 75°C [mA] 50°C 0.01 40 25°C 0 0.001 0.4 0.8 VF [V] 1.2 0 50 100 150 VR [V] Fig. 1 Max. forward voltage drop characteristics Fig. 2 Typ. reverse current IR vs. reverse voltage VR 5000 120 0.5 4000 0.25 CT 0.33 0.17 3000 DC 0.08 P(AV) 80 [pF] TVJ= 25°C 2000 [W] 40 1000 0 0 40 80 120 VR [V] 160 200 0 50 100 150 IF(AV) [A] Fig. 4a Power dissipation versus direct output current Fig. 4b and ambient temperature Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 180 0.5 160 0.4 140 120 IF ZthJC 0.3 DC 100 d = 0.5 [A] 80 [K/W] 60 40 0.2 Rthi [K/W] 0.06908 0.09397 0.1128 0.1241 0.1 20 0 0.0 0 40 80 TC [°C] 120 160 1 Fig. 5 Average forward current IF(AV) vs. case temp. TC IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 10 100 t [ms] ti [s] 0.00128 0.01279 0.02201 0.4439 1000 10000 Fig. 6 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20200127c