DSA240X200NA
Schottky Diode
VRRM
=
200 V
I FAV
= 2x 120 A
VF
=
0.87 V
High Performance Schottky Diode
Low Loss and Soft Recovery
Parallel legs
Part number
DSA240X200NA
Backside: isolated
2
1
3
4
Features / Advantages:
Applications:
Package: SOT-227B (minibloc)
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
● Isolation Voltage: 3000 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2021 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20210309d
DSA240X200NA
Ratings
Schottky
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
200
V
IR
reverse current, drain current
VF
forward voltage drop
min.
typ.
VR = 200 V
TVJ = 25°C
1.5
mA
VR = 200 V
TVJ = 125°C
15
mA
I F = 120 A
TVJ = 25°C
1.00
V
1.26
V
0.87
V
I F = 240 A
TVJ = 125 °C
I F = 120 A
I F = 240 A
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
TC = 95 °C
rectangular
1.17
V
T VJ = 150 °C
120
A
TVJ = 150 °C
0.54
V
2.5
mΩ
d = 0.5
for power loss calculation only
0.4 K/W
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
CJ
junction capacitance
VR =
TVJ = 25°C
IXYS reserves the right to change limits, conditions and dimensions.
© 2021 IXYS all rights reserved
max. Unit
200
V
K/W
0.1
TC = 25°C
24 V f = 1 MHz
902
Data according to IEC 60747and per semiconductor unless otherwise specified
310
W
1.60
kA
pF
20210309d
DSA240X200NA
Package
Ratings
SOT-227B (minibloc)
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
150
Unit
A
-40
150
°C
-40
125
°C
150
°C
30
Weight
g
MD
mounting torque
1.1
1.5
Nm
MT
terminal torque
1.1
1.5
Nm
d Spp/App
d Spb/Apb
VISOL
Product Marking
Logo
XXXXX ®
yywwZ
123456
Date
Code
Location
Ordering
Standard
8.6
50/60 Hz, RMS; IISOL ≤ 1 mA
3.2
mm
6.8
mm
3000
V
2500
V
Part description
Part
Number
UL
D
S
A
240
X
200
NA
=
=
=
=
=
=
=
Diode
Schottky Diode
low VF
Current Rating [A]
Parallel legs
Reverse Voltage [V]
SOT-227B (minibloc)
Lot#
Ordering Number
DSA240X200NA
Similar Part
DSS2x101-02A
Equivalent Circuits for Simulation
V0
10.5
t = 1 second
isolation voltage
t = 1 minute
I
terminal to terminal
terminal to backside
creepage distance on surface | striking distance through air
R0
Marking on Product
DSA240X200NA
Package
SOT-227B (minibloc)
* on die level
Delivery Mode
Tube
Code No.
511108
Voltage class
200
T VJ = 150°C
Schottky
V 0 max
threshold voltage
0.54
V
R0 max
slope resistance *
0.6
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2021 IXYS all rights reserved
Quantity
10
Data according to IEC 60747and per semiconductor unless otherwise specified
20210309d
DSA240X200NA
Outlines SOT-227B (minibloc)
2
1
3
4
IXYS reserves the right to change limits, conditions and dimensions.
© 2021 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20210309d
DSA240X200NA
Schottky
240
10
TVJ=150°C
200
1
IF
[A]
125°C
160
IR
100°C
120
0.1
TVJ =
25°C
125°C
150°C
80
75°C
[mA]
50°C
0.01
40
25°C
0
0.001
0.4
0.8
VF [V]
1.2
0
50
100
150
VR [V]
Fig. 1 Max. forward voltage drop characteristics
Fig. 2 Typ. reverse current IR versus reverse
voltage VR
5000
120
0.5
4000
0.25
CT
0.33
0.17
3000
DC
0.08
P(AV) 80
[pF]
TVJ= 25°C
2000
[W]
40
1000
0
0
40
80
120
VR [V]
160
200
0
50
100
150
IF(AV) [A]
Fig. 4 Forward power loss characteristics
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
180
0.5
160
0.4
140
120
IF
ZthJC 0.3
DC
100
d = 0.5
[A] 80
[K/W]
60
40
0.2
Rthi [K/W]
0.06908
0.09397
0.1128
0.1241
0.1
20
0
0.0
0
40
80
TC [°C]
120
Fig. 5 Average forward current IF(AV) versus
case temperature T C
IXYS reserves the right to change limits, conditions and dimensions.
© 2021 IXYS all rights reserved
160
1
10
100
t [ms]
ti [s]
0.00128
0.01279
0.02201
0.4439
1000
10000
Fig. 6 Transient thermal impedance
junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20210309d
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