DSA300I45NA

DSA300I45NA preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 300 A VF = 0.76 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I45NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b DSA300I45NA preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop min. typ. 45 V TVJ = 25°C 3 mA 45 V TVJ = 150°C 30 mA TVJ = 25°C 0.84 V 1.14 V 0.76 V TVJ = 125 °C I F = 300 A I F = 600 A VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 100 °C rectangular 1.10 V T VJ = 150 °C 300 A TVJ = 150 °C 0.41 V 1.12 mΩ d = 0.5 for power loss calculation only 0.15 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved V VR = I F = 600 A average forward current 45 VR = I F = 300 A I FAV max. Unit 45 V K/W 0.1 TC = 25°C 5 V f = 1 MHz 16.5 Data according to IEC 60747and per semiconductor unless otherwise specified 830 W 4.80 kA nF 20200127b DSA300I45NA preliminary Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 °C -40 125 °C 150 °C 1) 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App d Spb/Apb VISOL 8.6 50/60 Hz, RMS; IISOL ≤ 1 mA 3.2 mm 6.8 mm 3000 V 2500 V IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking Logo XXXXX ® yywwZ 1234 Date Code Location Ordering Standard D S A 300 I 45 NA = = = = = = = Diode Schottky Diode low VF Current Rating [A] Single Diode Reverse Voltage [V] SOT-227B (minibloc) Lot# Ordering Number DSA300I45NA Equivalent Circuits for Simulation V0 Part description Part Number UL Similar Part DSA300I100NA DSA300I200NA I 10.5 t = 1 second isolation voltage t = 1 minute 1) terminal to terminal terminal to backside creepage distance on surface | striking distance through air R0 Marking on Product DSA300I45NA Package SOT-227B (minibloc) SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 511251 Voltage class 100 200 T VJ = 150°C Schottky V 0 max threshold voltage 0.41 V R0 max slope resistance * 0.28 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b DSA300I45NA preliminary Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2 1 3 4 Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b DSA300I45NA preliminary Schottky 600 500 400 IF 300 TVJ = 25°C 125°C 150°C [A] 200 100 0 0.2 0.4 0.6 0.8 1.0 1.2 VF [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 1 Max. forward voltage drop characteristics Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 350 dc = 1 0.5 0.4 0.33 0.17 0.08 200 150 P(AV) RthHA 0.2 0.4 0.6 0.8 1.0 2.0 300 250 IF(AV) dc = 1 0.5 0.4 0.33 0.17 200 [A] 100 [W] 150 100 50 50 0 0 0 50 100 150 200 250 IF(AV) [A] 0 40 80 120 160 0 40 80 120 160 TC [°C] Tamb [°C] Fig. 5 Average forward current IF(AV) vs. case temp. TC Fig. 4a Power dissipation versus direct output current Fig. 4b and ambient temperature 0.16 0.12 ZthJC Rthi [K/W] 0.017 0.013 0.02 0.05 0.05 0.08 [K/W] 0.04 ti [s] 0.01 0.00001 0.01 0.045 0.3 0.00 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b