DSA30C100QB

DSA30C100QB preliminary Schottky Diode Gen ² VRRM = I FAV = 2x VF = 100 V 15 A 0.72 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C100QB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-3P ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline compatible with TO-247 ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b DSA30C100QB preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 100 IR reverse current, drain current VR = 100 V TVJ = 25°C 250 µA VR = 100 V TVJ = 125°C 2.5 mA IF = 15 A TVJ = 25°C 0.91 V IF = 30 A 1.06 V IF = 15 A 0.72 V IF = 30 A VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. TVJ = 125 °C TC = 150 °C rectangular V 0.90 V T VJ = 175 °C 15 A TVJ = 175 °C 0.46 V 11.7 mΩ 1.75 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2020 IXYS all rights reserved max. Unit 100 V d = 0.5 for power loss calculation only IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.3 TC = 25°C 12 V f = 1 MHz 85 340 146 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20200127b DSA30C100QB preliminary Package Ratings TO-3P Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 °C -55 150 °C 150 °C 1) 5 Weight MD mounting torque FC mounting force with clip Product Marking Logo Part Number Date Code Lot# g 0.8 1.2 Nm 20 120 N Part description D S A 30 C 100 QB IXYS yywwZ = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-3P (3) 1234 Location Ordering Standard Ordering Number DSA30C100QB Similar Part DSA30C100HB DSA30C100PB DSA30C100PN Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA30C100QB Package TO-247AD (3) TO-220AB (3) TO-220ABFP (3) * on die level Delivery Mode Tube Code No. 503339 Voltage class 100 100 100 T VJ = 175°C Schottky V 0 max threshold voltage 0.46 V R0 max slope resistance * 9.1 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b DSA30C100QB preliminary Outlines TO-3P 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b