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DSA30C150HB

DSA30C150HB

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    TO247

  • 描述:

    DIODE ARRAY SCHOTTKY 150V TO247

  • 数据手册
  • 价格&库存
DSA30C150HB 数据手册
DSA30C150HB preliminary Schottky Diode Gen ² VRRM = I FAV = 2x VF = 150 V 15 A 0.74 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C150HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200128b DSA30C150HB preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 150 IR reverse current, drain current VR = 150 V TVJ = 25°C 250 µA VR = 150 V TVJ = 125°C 2.5 mA IF = 15 A TVJ = 25°C 0.88 V IF = 30 A 1.00 V IF = 15 A 0.74 V IF = 30 A VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. TVJ = 125 °C TC = 150 °C rectangular V 0.87 V T VJ = 175 °C 15 A TVJ = 175 °C 0.55 V 8.2 mΩ 1.75 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2020 IXYS all rights reserved max. Unit 150 V d = 0.5 for power loss calculation only IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.3 TC = 25°C 24 V f = 1 MHz 85 330 82 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20200128b DSA30C150HB preliminary Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 °C -55 150 °C 150 °C 1) 6 Weight MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part description D S A 30 C 150 HB IXYS Logo g = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DSA30C150HB Similar Part DSA30C150PB DSA30C150PC Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA30C150HB Package TO-220AB (3) TO-263AB (D2Pak) (2) * on die level Delivery Mode Tube Code No. 503353 Voltage class 150 150 T VJ = 175°C Schottky V 0 max threshold voltage 0.55 V R0 max slope resistance * 5.6 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20200128b DSA30C150HB preliminary Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b C b4 A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200128b
DSA30C150HB 价格&库存

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