DSA30C200IB

DSA30C200IB Schottky Diode VRRM = I FAV = 2x VF = 200 V 15 A 0.78 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C200IB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-262 (I2Pak) ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190923c DSA30C200IB Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 200 IR reverse current, drain current VR = 200 V TVJ = 25°C 250 µA VR = 200 V TVJ = 125°C 2.5 mA IF = 15 A TVJ = 25°C 0.94 V IF = 30 A 1.10 V IF = 15 A 0.78 V IF = 30 A VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. TVJ = 125 °C TC = 155 °C rectangular V 0.95 V T VJ = 175 °C 15 A TVJ = 175 °C 0.53 V 10.8 mΩ 1.75 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2019 IXYS all rights reserved max. Unit 200 V d = 0.5 for power loss calculation only IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.50 TC = 25°C 48 V f = 1 MHz 85 320 47 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20190923c DSA30C200IB Package Ratings TO-262 (I2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1.5 Weight FC typ. 1) 20 mounting force with clip Product Marking Logo Part Number Date Code Lot# g 60 N Part description D S A 30 C 200 IB IXYS XXXXXXXX = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-262 (I2Pak) (3) yyww Z 1234 Location Ordering Standard Ordering Number DSA30C200IB Similar Part DSA30C200PB DSA30C200PC Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA30C200IB Package TO-220AB (3) TO-263AB (D2Pak) (2) * on die level Delivery Mode Tube Code No. 512200 Voltage class 200 200 T VJ = 175 °C Schottky V 0 max threshold voltage 0.53 V R0 max slope resistance * 7.6 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20190923c DSA30C200IB Outlines TO-262 (I2Pak) E A L2 E1 Optional Note 3 c1 D1 D 4 1 2 3 L1 L c b1 b A1 e NOTE: 1. This drawing will meet all dimensions requirement of JEDEC outline TO-262 AA. 2. All metal surface are matte pure tin plated except trimmed area. 3. Inter locking slot depends upon frame type. 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20190923c DSA30C200IB Schottky 30 100 25 300 TVJ=175°C TVJ = 25°C 250 10 150°C 20 200 IR IF 15 [mA] [A] 5 150 100°C [pF] 0.1 TVJ = 150°C 125°C 25°C 10 CT 1 125°C 75°C 100 50°C 0.01 50 25°C 0 0.0 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 0 20 40 60 80 100 VR [V] VF [V] Fig. 1 Maximum forward voltage drop characteristics 0 40 80 120 160 200 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 32 40 28 DC 24 30 d = 0.5 P(AV) 20 IF(AV) d= DC 0.5 0.33 0.25 0.17 0.08 16 20 [W] [A] 12 8 10 4 0 0 0 50 100 150 200 0 5 10 TC [°C] 15 20 25 30 35 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 2.0 1.0 D=0.5 0.33 0.25 0.17 ZthJC 0.08 0.1 [K/W] Single Pulse (Thermal Resistance) 0.0 0.0001 0.001 Note: All curves are per diode 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190923c