DSA30C200PB

DSA30C200PB Schottky Diode VRRM = I FAV = 2x VF = 200 V 15 A 0.78 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C200PB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-220 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190923b DSA30C200PB Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 200 IR reverse current, drain current VR = 200 V TVJ = 25°C 250 µA VR = 200 V TVJ = 125°C 2.5 mA IF = 15 A TVJ = 25°C 0.94 V IF = 30 A 1.10 V IF = 15 A 0.78 V IF = 30 A VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. TVJ = 125 °C TC = 155 °C rectangular V 0.95 V T VJ = 175 °C 15 A TVJ = 175 °C 0.53 V 10.8 mΩ 1.75 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2019 IXYS all rights reserved max. Unit 200 V d = 0.5 for power loss calculation only IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.50 TC = 25°C 48 V f = 1 MHz 85 320 47 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20190923b DSA30C200PB Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1) 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number Logo Date Code Lot # g 0.4 0.6 Nm 20 60 N Part description D S A 30 C 200 PB XXXXXX = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-220AB (3) yywwZ 123456 Location Ordering Standard Ordering Number DSA30C200PB Similar Part DSA30C200IB DSA30C200PC Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA30C200PB Package TO-262 (I2Pak) (3) TO-263AB (D2Pak) (2) * on die level Delivery Mode Tube Code No. 507014 Voltage class 200 200 T VJ = 175 °C Schottky V 0 max threshold voltage 0.53 V R0 max slope resistance * 7.6 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20190923b DSA30C200PB Outlines TO-220 A = supplier option H1 ØP D 4 3 L 3x b2 2 L1 1 3x b C 2x e A2 1 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20190923b DSA30C200PB Schottky 30 100 25 300 TVJ=175°C TVJ = 25°C 250 10 150°C 20 200 IR IF 15 [mA] [A] 5 150 100°C [pF] 0.1 TVJ = 150°C 125°C 25°C 10 CT 1 125°C 75°C 100 50°C 0.01 50 25°C 0 0.0 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 0 20 40 60 80 100 VR [V] VF [V] Fig. 1 Maximum forward voltage drop characteristics 0 40 80 120 160 200 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 32 40 28 DC 24 30 d = 0.5 P(AV) 20 IF(AV) d= DC 0.5 0.33 0.25 0.17 0.08 16 20 [W] [A] 12 8 10 4 0 0 0 50 100 150 200 0 5 10 TC [°C] 15 20 25 30 35 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 2.0 1.0 D=0.5 0.33 0.25 0.17 ZthJC 0.08 0.1 [K/W] Single Pulse (Thermal Resistance) 0.0 0.0001 0.001 Note: All curves are per diode 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20190923b