DSA30I150PA

DSA30I150PA Schottky Diode Gen ² VRRM = 150 V I FAV = 30 A VF = 0.8 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA30I150PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200128d DSA30I150PA Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 150 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. V VR = 150 V TVJ = 25°C 450 µA TVJ = 125°C 5 mA IF = 30 A TVJ = 25°C 0.93 V IF = 60 A 1.09 V IF = 30 A 0.80 V IF = 60 A TVJ = 125 °C TC = 150 °C 0.98 V T VJ = 175 °C 30 A TVJ = 175 °C 0.55 V 6 mΩ d = 0.5 for power loss calculation only 0.85 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2020 IXYS all rights reserved max. Unit 150 V VR = 150 V rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.5 TC = 25°C 12 V f = 1 MHz 175 390 289 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20200128d DSA30I150PA Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number Logo Date Code Lot # g 0.4 0.6 Nm 20 60 N Part description D S A 30 I 150 PA XXXXXX = = = = = = = Diode Schottky Diode low VF Current Rating [A] Single Diode Reverse Voltage [V] TO-220AC (2) yywwZ 123456 Location Ordering Standard Ordering Number DSA30I150PA Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA30I150PA * on die level Delivery Mode Tube Code No. 504155 T VJ = 175°C Schottky V 0 max threshold voltage 0.55 V R0 max slope resistance * 2.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20200128d DSA30I150PA Outlines TO-220 A = supplier option H1 ØP D 4 3 L1 1 L 2x b2 2x b C e A2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20200128d DSA30I150PA Schottky 60 10 50 IR TVJ = 25°C 125°C 150°C 30 [A] 600 1 150°C 40 IF 700 TVJ=175°C 500 125°C 0.1 100°C CT 400 0.01 75°C [pF] 300 50°C 200 25°C 100 [mA] TVJ= 25°C 20 0.001 10 0 0.0 0.0001 0.4 0.8 1.2 0 50 100 150 VF [V] VR [V] Fig. 1 Maximum forward voltage drop characteristics Fig. 2 Typ. reverse current IR vs. reverse voltage VR 0 50 100 150 VR [V] Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 30 40 25 DC 30 d = 0.5 20 IF(AV) P(AV) 20 d= DC 0.5 0.33 0.25 0.17 0.08 15 [A] [W] 10 10 5 0 0 0 40 80 120 160 0 200 TC [°C] 5 10 15 20 25 30 A IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temp. TC Fig. 5 Forward power loss characteristics 1 ZthJC [K/W] 0.1 0.001 0.01 0.1 1 Rthi [K/W] ti [s] 0.139 0.176 0.305 0.23 0.00028 0.0033 0.028 0.17 Note: All curves are per diode 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200128d