DSA60C150PB

DSA60C150PB Schottky Diode Gen ² VRRM = I FAV = 2x 30 A VF = 0.8 V 150 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA60C150PB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-220 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200128d DSA60C150PB Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 150 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. V VR = 150 V TVJ = 25°C 450 µA TVJ = 125°C 5 mA IF = 30 A TVJ = 25°C 0.93 V IF = 60 A 1.09 V IF = 30 A 0.80 V IF = 60 A TVJ = 125 °C TC = 150 °C 0.98 V T VJ = 175 °C 30 A TVJ = 175 °C 0.55 V 6 mΩ d = 0.5 for power loss calculation only 0.85 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2020 IXYS all rights reserved max. Unit 150 V VR = 150 V rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.5 TC = 25°C 12 V f = 1 MHz 175 390 289 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20200128d DSA60C150PB Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1) 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number Logo Date Code Lot # g 0.4 0.6 Nm 20 60 N Part description D S A 60 C 150 PB XXXXXX = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-220AB (3) yywwZ 123456 Location Ordering Standard Ordering Number DSA60C150PB Similar Part DSA50C150HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA60C150PB Package TO-247AD (3) * on die level Delivery Mode Tube Code No. 509198 Voltage class 150 T VJ = 175°C Schottky V 0 max threshold voltage 0.55 V R0 max slope resistance * 2.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20200128d DSA60C150PB Outlines TO-220 A = supplier option H1 ØP D 4 3 L 3x b2 2 L1 1 3x b C 2x e A2 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200128d DSA60C150PB Schottky 100 10 1000 TVJ=175°C 1 150°C IR 125°C IF 0.1 10 TVJ = 175°C 125°C 25°C [A] CT 100°C [mA] 100 [pF] 0.01 75°C 50°C 0.001 25°C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TVJ= 25°C 10 0.0001 0 50 100 150 0 50 VR [V] VF [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 1 Maximum forward voltage drop characteristics 100 150 VR [V] Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 60 70 60 50 DC 50 d = 0.5 40 P(AV) 40 IF(AV) d= DC 0.5 0.33 0.25 0.17 0.08 30 30 [W] [A] 20 20 10 10 0 0 0 40 80 120 0 160 10 20 TC [°C] 30 40 50 60 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 1 i 1 2 3 4 5 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 Rthi [K/W] 0.02326 0.1539 0.2031 0.3892 0.08053 ti [s] 0.0005 0.011 0.072 0.34 1.5 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200128d