DSA70C200HB

DSA70C200HB preliminary Schottky Diode VRRM = I FAV = 2x VF = 200 V 35 A 0.79 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA70C200HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210309c DSA70C200HB preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 200 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. V VR = 200 V TVJ = 25°C 640 µA TVJ = 125°C 7 mA IF = 35 A TVJ = 25°C 0.93 V IF = 70 A 1.07 V IF = 35 A 0.79 V IF = 70 A TVJ = 125 °C TC = 150 °C 0.95 V T VJ = 175 °C 35 A TVJ = 175 °C 0.55 V 4.8 mΩ d = 0.5 for power loss calculation only 0.7 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2021 IXYS all rights reserved max. Unit 200 V VR = 200 V rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.25 TC = 25°C 24 V f = 1 MHz 215 550 261 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20210309c DSA70C200HB preliminary Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 °C -55 150 °C 150 °C 1) 6 Weight MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part description D S A 70 C 200 HB IXYS Logo g = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DSA70C200HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA70C200HB * on die level Delivery Mode Tube Code No. 509195 T VJ = 175°C Schottky V 0 max threshold voltage 0.55 V R0 max slope resistance * 2.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20210309c DSA70C200HB preliminary Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b C b4 A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20210309c DSA70C200HB preliminary Schottky 70 700 60 600 50 500 TVJ = 150°C 125°C 25°C IF 40 [A] 30 [pF] 200 10 100 0 0.2 0.4 0.6 0.8 VF [V] 1.0 1.2 0 100 VR [V] 150 200 60 80 70 50 DC 60 [A] 50 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR Fig. 1 Maximum forward voltage drop characteristics IF(AV) 300 20 0 0.0 TVJ= 25°C CT 400 40 d = 0.5 50 P(AV) d= DC 0.5 0.33 0.25 0.17 0.08 30 40 [W] 30 20 20 10 10 0 0 0 40 80 120 TC [°C] 160 0 200 10 20 30 40 50 60 70 IF(AV) [A] Fig. 4 Avg: forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 0.8 0.6 ZthJC 0.4 [K/W] 0.2 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210309c