DSA80C100PB

DSA80C100PB Schottky Diode Gen ² VRRM = I FAV = 2x 40 A VF = 0.8 V 100 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA80C100PB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-220 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b DSA80C100PB Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 100 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. V VR = 100 V TVJ = 25°C 680 µA TVJ = 125°C 7 mA IF = 40 A TVJ = 25°C 0.97 V IF = 80 A 1.19 V IF = 40 A 0.80 V IF = 80 A TVJ = 125 °C TC = 150 °C 1.05 V T VJ = 175 °C 40 A TVJ = 175 °C 0.45 V 6.5 mΩ d = 0.5 for power loss calculation only 0.6 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2020 IXYS all rights reserved max. Unit 100 V VR = 100 V rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.5 TC = 25°C 12 V f = 1 MHz 250 490 406 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20200127b DSA80C100PB Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1) 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number Logo Date Code Lot # g 0.4 0.6 Nm 20 60 N Part description D S A 80 C 100 PB XXXXXX = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-220AB (3) yywwZ 123456 Location Ordering Standard Ordering Number DSA80C100PB Similar Part DSA70C100HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA80C100PB Package TO-247AD (3) * on die level Delivery Mode Tube Code No. 502795 Voltage class 100 T VJ = 175°C Schottky V 0 max threshold voltage 0.45 V R0 max slope resistance * 3.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b DSA80C100PB Outlines TO-220 A = supplier option H1 ØP D 4 3 L 3x b2 2 L1 1 3x b C 2x e A2 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b DSA80C100PB Schottky 80 100 TVJ = 150°C TVJ = 125°C TVJ = 25°C 60 1200 TVJ = 25°C 1000 175°C 10 150°C IR IF 125°C 1 100°C 40 [A] 0.1 [A] 75°C 50°C 20 0.8 1.2 20 40 60 80 100 120 VR [V] 0 20 40 60 80 100 VF [V] Fig. 2 Typ. value of rev. current IR vs. reverse voltage VR 40 400 0 0 VF [V] Fig. 1 Max. forward voltage drop characteristics 600 [pF] 200 0.001 0.4 CJ 25°C 0.01 0 0.0 800 Fig. 3 Typ. junction capacitance CJ vs. reverse voltage VR 25 D = 0.5 DC 20 30 Ptot 15 IDAVM 20 [W] [A] D= DC 0.5 0.33 0.25 0.17 0.08 10 10 5 0 0 0 40 80 120 160 200 0 TC [°C] 5 10 15 20 25 30 35 IFAV [A] Fig. 5 Forward power loss characteristics Fig. 4 Average forward current IF(AV) vs. case temp. TC 0.6 RthJC 0.4 [K/W] 0.2 Note: All curves are per diode 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b