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DSA9-12F

DSA9-12F

  • 厂商:

    IXYS(艾赛斯)

  • 封装:

    DO-203AA(DO-5)

  • 描述:

    DIODE AVALANCHE 1.2KV 11A DO203

  • 数据手册
  • 价格&库存
DSA9-12F 数据手册
DSA 9 VRRM = 1200-1800 V IF(RMS) = 18 A IFAVM = 11 A Avalanche Diode Replacements see below VRSM V(BR)min VRRM V V V 1300 1700 1900 1300 1750 1950 1200 1600 1800 Type A C DO-203 AA C DSA 9-12F DSA 9-16F DSA 9-18F A A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 150°C; 180° sine 18 11 A A PRSM TVJM, tp = 10 ms 4.5 kW IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 250 265 A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 220 A TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 310 295 A2 s TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 190 A2 s -40...+180 180 -40...+180 °C °C °C 2.2...2.8 Nm o e s a h p Characteristic Values max. TVJ = TVJM 3 mA IF = 36 A TVJ = 25°C 1.4 V VT0 rT For power-loss calculations only TVJ = TVJM 0.85 15 V mΩ RthJC RthJH DC current 180° sine DC current 2 2.17 3.0 K/W K/W K/W dS dA a Creepage distance on surface Strike distance through air Max. allowable acceleration 2.0 2.0 100 mm mm m/s2 2 VR = VRRM VF max. IR 2.6 19.7 typ. 4.4 Replacements DSA9-12F DSI30-12A DSA9-16F DSI30-16A DSA9-18F contact factory IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved Ø2 M5 2.3 Type SW 11 Data according to IEC 60747 10.3 g 0.8 5 7.8 Conditions t u Dimensions in mm (1 mm = 0.0394") 2 Symbol • Space and weight savings • Simple mounting • Improved temperature & power cycling • Reduced protection circuits 4 typical Advantages 4 Weight • Supplies for DC power equipment • DC supply for PWM inverter • Field supply for DC motors • Battery DC power supplies 10.5 mounting torque Applications 0.5 Md • International standard package JEDEC DO-203 AA • Planar passivated chips 0.5 TVJ TVJM Tstg Features 11.5 I2t Maximum Ratings 20190130b 1-2 DSA 9 50 300 1000 A A 250 800 A2s typ. 40 lim. 50Hz, 80%VRRM IFSM IF 30 TVJ= 180°C TVJ= 25°C 600 2 TVJ = 45°C TVJ = 180°C 200 VR = 0 V It 400 150 20 TVJ=45°C 100 10 200 TVJ=180°C 50 0 V 1.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF 0 10-3 Fig. 1 Forward characteristics 100 10-2 10-1 100 s t 101 1 25 25 W A RthJA : 15 10 10 DC 180° sin 120° 60° 30° 5 0 o e s a h p 5 10 15 IF(AV)M A 20 00 50 150 °C 200 100 K/W 4 ZthJH 2 1 0 10-3 50 100 150 200 °C 250 Tcase Fig. 5 Max. forward current at case temperature RthJH for various conduction angles d: 30° 60° 120° 180° DC 3 0 Tamb Fig. 4 Power dissipation versus forward current and ambient temperature 5 t u 5 0 0 5 6 7 ms 8 910 t DC d = 180° sin d = 120° d= 60° d= 30° IF(AV)M 13 K/W (CU80x80) 18 K/W 15 4 20 8.3 K/W PF 3 Fig. 3 I2t versus time (1-10 ms) Fig. 2 Surge overload current IFSM: crest value, t: duration 20 2 d RthJH (K/W) DC 180° 120° 60° 30° 3.0 3.35 3.56 4.0 4.64 Constants for ZthJH calculation: i 10-2 10-1 100 101 102 103 s t 104 1 2 3 4 Rthi (K/W) ti (s) 0.095 0.515 1.39 1.0 0.00032 0.0102 0.360 2.30 Fig. 6 Transient thermal impedance junction to heatsink IXYS reserves the right to change limits, test conditions and dimensions. © 2019 IXYS All rights reserved 20190130b 2-2
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