DSA90C200HB

DSA90C200HB Schottky Diode VRRM = I FAV = 2x VF = 200 V 45 A 0.86 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA90C200HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210309e DSA90C200HB Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 200 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. V VR = 200 V TVJ = 25°C 900 µA TVJ = 125°C 5 mA IF = 45 A TVJ = 25°C 0.96 V IF = 90 A 1.18 V IF = 45 A 0.86 V IF = 90 A TVJ = 125 °C TC = 145 °C 1.14 V T VJ = 175 °C 45 A TVJ = 175 °C 0.52 V 6.5 mΩ d = 0.5 for power loss calculation only 0.55 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2021 IXYS all rights reserved max. Unit 200 V VR = 200 V rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.25 TC = 25°C 24 V f = 1 MHz 275 820 261 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20210309e DSA90C200HB Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 °C -55 150 °C 150 °C 1) 6 Weight MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part description D S A 90 C 200 HB IXYS Logo g = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part Number Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DSA90C200HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA90C200HB * on die level Delivery Mode Tube Code No. 502854 T VJ = 175°C Schottky V 0 max threshold voltage 0.52 V R0 max slope resistance * 3.9 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20210309e DSA90C200HB Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 3x b C b4 A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20210309e DSA90C200HB Schottky 100 10.000 1000 TVJ = 175°C 1.000 IF 125°C IR 10 150°C CT 0.100 100°C [A] TVJ= 25°C [mA] TVJ = 150°C 125°C 25°C 1 0.2 [pF] 75°C 0.010 50°C 25°C 0.001 0.4 0.6 0.8 1.0 1.2 1.4 100 0 VF [V] 70 40 80 120 160 200 VR [V] Fig. 1 Max. forward voltage drop characteristics 0 50 100 150 200 VR [V] Fig. 2 Typ. reverse current IR vs. rev: voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 100 100 80 80 DC d = 0.5 60 P(AV) 60 IF(AV) [A] [W] 40 d= DC 0.5 0.33 0.25 0.17 0.08 40 20 20 0 0 0 40 80 120 0 10 20 30 40 50 60 70 80 90 160 TC [°C] IF(AV) [A] Fig. 5 Forward power loss characteristics Fig. 4 Avg. forward current IF(AV) vs. case temp. TC 1 ZthJC D = 0.5 0.33 [K/W] 0.25 0.17 0.08 0.1 Single Pulse 0.001 0.01 0.1 1 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2021 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20210309e