DSB15IM45IB

DSB15IM45IB preliminary Schottky Diode VRRM = 45 V I FAV = 15 A VF = 0.55 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSB15IM45IB Backside: cathode 1 3 2 Features / Advantages: Applications: Package: TO-262 (I2Pak) ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b DSB15IM45IB preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 45 V VR = 45 V TVJ = 25°C 5 mA 45 V TVJ = 100°C 50 mA TVJ = 25°C 0.59 V 0.83 V 0.55 V IF = 15 A IF = 30 A IF = 15 A IF = 30 A TVJ = 125 °C TC = 130 °C 0.80 V T VJ = 150 °C 15 A TVJ = 150 °C 0.31 V 15.5 mΩ d = 0.5 for power loss calculation only 1.75 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2020 IXYS all rights reserved max. Unit 45 V VR = rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.5 TC = 25°C 5 V f = 1 MHz 70 340 497 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20200127b DSB15IM45IB preliminary Package Ratings TO-262 (I2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 35 Unit A -55 150 °C -55 125 °C 150 °C 1.5 Weight FC typ. 20 mounting force with clip Product Marking Logo Part Number Date Code Lot# g 60 N Part description D S B 15 IM 45 IB IXYS XXXXXXXX = = = = = = = Diode Schottky Diode ultra low VF Current Rating [A] Single Diode Reverse Voltage [V] TO-262 (I2Pak) (3) yyww Z 1234 Location Ordering Standard Ordering Number DSB15IM45IB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSB15IM45IB * on die level Delivery Mode Tube Code No. 502322 T VJ = 150°C Schottky V 0 max threshold voltage 0.31 V R0 max slope resistance * 12.4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b DSB15IM45IB preliminary Outlines TO-262 (I2Pak) E A L2 E1 Optional Note 3 c1 D1 D 4 1 2 3 L1 L c b1 b A1 e NOTE: 1. This drawing will meet all dimensions requirement of JEDEC outline TO-262 AA. 2. All metal surface are matte pure tin plated except trimmed area. 3. Inter locking slot depends upon frame type. 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b