DSB1I40SA

DSB 1 I 40 SA advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number (Marking on product) DSB 1 I 40 SA (S1FB) 40 V 1A 0.40 V Features / Advantages: Applications: Package: ● Very low Vf ● Extremely low switching losses ● Low Irm-values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Low losses ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Decoupling diode ● Industry standard outline ● Epoxy meets UL 94V-0 ● RoHS compliant SMA (DO-214AC) Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF max. Unit TVJ = 25 °C 40 V VR = 40 V TVJ = 25 °C 0.1 mA VR = 40 V TVJ = 125 °C 15 mA IF = IF = 1A 2A TVJ = 25 °C 0.48 0.58 V V IF = IF = 1A 2A T VJ = 125 °C 0.40 0.50 V V rectangular, d = 0.5 T L = 125 °C 1 A Conditions forward voltage I FAV average forward current VF0 rF threshold voltage slope resistance R thJL thermal resistance junction to lead* TVJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current CJ min. typ. T L = 150 °C for power loss calculation only V mΩ 40 K/W 150 °C TL = 25 °C 3 W tp = 10 ms (50 Hz), sine TVJ = 45 °C 45 A junction capacitance VR = TVJ = 25 °C 78 pF EAS non-repetitive avalanche energy I AS = TVJ = 25 °C tbd mJ I AR repetitive avalanche current VA = 1.5·VR typ.; f = 10 kHz tbd A -55 V; f = 1 MHz A; L = 100 µH * mounted on 1 inch square PCB © 2006 IXYS all rights reserved Data according to IEC 60747 and per diode unless otherwise specified 0614 IXYS reserves the right to change limits, conditions and dimensions. DSB 1 I 40 SA advanced Ratings Symbol Definition Conditions I RMS RMS current per pin* R thJA thermal resistance junction to ambient MD mounting torque FC mounting force with clip T stg storage temperature min. typ. Unit max. A 80 K/W Nm N 150 -55 Weight °C 0.07 g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines SMA (DO-214AC) E D H Dim. F Inches min max min max A 3.99 4.50 0.157 0.177 B 2.54 2.79 0.100 0.110 C 1.25 1.65 0.049 0.065 D 1.98 2.29 0.078 0.090 E 4.93 5.28 0.194 0.208 F 0.76 1.52 0.030 0.060 G 0.15 0.31 0.006 0.012 H 2.00 2.20 0.079 0.087 B C G Millimeters A © 2006 IXYS all rights reserved Data according to IEC 60747 and per diode unless otherwise specified 0614 IXYS reserves the right to change limits, conditions and dimensions.