DSB20C60PN

DSB20C60PN preliminary Schottky Diode Gen ² VRRM = 60 V I FAV = 2x 10 A VF = 0.62 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSB20C60PN Backside: isolated 1 2 3 Features / Advantages: Applications: Package: TO-220FP ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Isolation Voltage: 2500 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Base plate: Plastic overmolded tab ● Reduced weight Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b DSB20C60PN preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 60 V VR = 60 V TVJ = 25°C 4 mA 60 V TVJ = 100°C 35 mA TVJ = 25°C 0.69 V 0.93 V 0.62 V IF = 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 125 °C TC = 110 °C 0.82 V T VJ = 150 °C 10 A TVJ = 150 °C 0.44 V 16.1 mΩ d = 0.5 for power loss calculation only 4.5 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2020 IXYS all rights reserved max. Unit 60 V VR = rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.5 TC = 25°C 12 V f = 1 MHz 30 240 149 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20200127b DSB20C60PN preliminary Package Ratings TO-220FP Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 150 °C -55 125 °C 150 °C 2 Weight MD mounting torque FC mounting force with clip d Spp/App d Spb/Apb VISOL terminal to terminal 1.6 terminal to backside 2.5 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute Product Marking Part Number Logo DateCode Lot# 50/60 Hz, RMS; IISOL ≤ 1 mA g 0.4 0.6 Nm 20 60 N 1.0 mm 2.5 mm 2500 V 2100 V Part description D S B 20 C 60 PN XXXXXX = = = = = = = Diode Schottky Diode ultra low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-220ABFP (3) yywwZ 123456 Location Ordering Standard Ordering Number DSB20C60PN Equivalent Circuits for Simulation I V0 R0 * on die level Delivery Mode Tube Quantity 50 Code No. 508864 T VJ = 150°C Schottky V 0 max threshold voltage 0.44 R0 max slope resistance * 13 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Marking on Product DSB20C60PN V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b DSB20C60PN preliminary Outlines TO-220FP A ØP E A1 Q H Dim. D 1 2 3 L1 A2 L b1 c b e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved 2 A A1 A2 b c D E e H L L1 ØP Q Millimeters min max 4.50 4.90 2.34 2.74 2.56 2.96 0.70 0.90 0.45 0.60 15.67 16.07 9.96 10.36 2.54 BSC 6.48 6.88 12.68 13.28 3.03 3.43 3.08 3.28 3.20 3.40 Inches min max 0.177 0.193 0.092 0.108 0.101 0.117 0.028 0.035 0.018 0.024 0.617 0.633 0.392 0.408 0.100 BSC 0.255 0.271 0.499 0.523 0.119 0.135 0.121 0.129 0.126 0.134 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b