DSB2I60SB

DSB 2 I 60 SB advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number (Marking on product) DSB 2 I 60 SB (S2HBB) 60 V 2A 0.52 V Features / Advantages: Applications: Package: ● Very low Vf ● Extremely low switching losses ● Low Irm-values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Low losses ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Decoupling diode ● Industry standard outline ● Epoxy meets UL 94V-0 ● RoHS compliant SMB (DO-214AA) Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF max. Unit TVJ = 25 °C 60 V VR = 60 V TVJ = 25 °C 0.1 mA VR = 60 V TVJ = 125 °C 25 mA IF = IF = 2A 4A TVJ = 25 °C 0.60 0.72 V V IF = IF = 2A 4A T VJ = 125 °C 0.52 0.64 V V rectangular, d = 0.5 T L = 125 °C 2 A Conditions forward voltage min. I FAV average forward current VF0 rF threshold voltage slope resistance R thJL thermal resistance junction to lead* TVJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current tp = 10 ms (50 Hz), sine CJ junction capacitance VR = EAS non-repetitive avalanche energy I AS = I AR repetitive avalanche current VA = 1.5·VR typ.; f = 10 kHz T L = 150 °C for power loss calculation only V mΩ 25 K/W 150 °C TL = 25 °C 5 W TVJ = 45 °C 75 A 25 °C 120 pF TVJ = 25 °C tbd mJ tbd A -55 5 V; f = 1 MHz A; typ. L = 100 µH TVJ = * mounted on 1 inch square PCB © 2006 IXYS all rights reserved Data according to IEC 60747 and per diode unless otherwise specified 0615 IXYS reserves the right to change limits, conditions and dimensions. DSB 2 I 60 SB advanced Ratings Symbol Definition Conditions I RMS RMS current per pin* R thJA thermal resistance junction to ambient MD mounting torque FC mounting force with clip T stg storage temperature min. typ. Unit max. A 70 K/W Nm N 150 -55 Weight °C 0.1 g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines SMB (DO-214AA) E D H Dim. F Inches min max min max A 4.06 4.57 0.160 0.180 B 3.30 3.94 0.130 0.155 C 1.95 2.20 0.077 0.087 D 2.13 2.44 0.084 0.096 E 5.21 5.59 0.205 0.220 F 0.76 1.52 0.030 0.060 G 0.15 0.31 0.006 0.012 H 2.00 2.20 0.079 0.087 B C G Millimeters A © 2006 IXYS all rights reserved Data according to IEC 60747 and per diode unless otherwise specified 0615 IXYS reserves the right to change limits, conditions and dimensions.