DSB30C30PB

DSB30C30PB preliminary Schottky Diode VRRM = 30 V I FAV = 2x 15 A VF = 0.44 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSB30C30PB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-220 ● Very low Vf ● Extremely low switching losses ● Low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b DSB30C30PB preliminary Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 30 V IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. VR = 30 V TVJ = 25°C 10 mA 30 V TVJ = 100°C 40 mA TVJ = 25°C 0.51 V 0.66 V 0.44 V IF = 15 A IF = 30 A IF = 15 A IF = 30 A TVJ = 125 °C TC = 135 °C 0.64 V T VJ = 150 °C 15 A TVJ = 150 °C 0.21 V 13.9 mΩ d = 0.5 for power loss calculation only 1.75 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = TVJ = 25°C © 2020 IXYS all rights reserved max. Unit 30 V VR = rectangular IXYS reserves the right to change limits, conditions and dimensions. typ. K/W 0.5 TC = 25°C 5 V f = 1 MHz 70 340 639 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20200127b DSB30C30PB preliminary Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 150 °C -55 125 °C 150 °C 1) 2 Weight MD mounting torque FC mounting force with clip Product Marking Part Number Logo Date Code Lot # g 0.4 0.6 Nm 20 60 N Part description D S B 30 C 30 PB XXXXXX = = = = = = = Diode Schottky Diode ultra low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-220AB (3) yywwZ 123456 Location Ordering Standard Ordering Number DSB30C30PB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSB30C30PB * on die level Delivery Mode Tube Code No. 502482 T VJ = 150°C Schottky V 0 max threshold voltage 0.21 V R0 max slope resistance * 10.8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b DSB30C30PB preliminary Outlines TO-220 A = supplier option H1 ØP D 4 3 L 3x b2 2 L1 1 3x b C 2x e A2 1 IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A1 Q E Dim. 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20200127b