DSEC120-12AK

DSEC120-12AK HiPerFRED VRRM = I FAV = 2x 60 A t rr = 40 ns 1200 V High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DSEC120-12AK Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-264 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610d DSEC120-12AK Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 IR reverse current, drain current VF forward voltage drop min. typ. max. Unit 1200 V V VR = 1200 V TVJ = 25°C 650 µA VR = 1200 V TVJ = 150°C 2,5 mA IF = TVJ = 25°C 2,66 V 3,18 V 1,81 V 60 A I F = 120 A IF = TVJ = 150 °C 60 A I F = 120 A TC = 115°C 2,40 V T VJ = 175°C 60 A TVJ = 175°C 1,08 V 9,4 mΩ I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 600 V f = 1 MHz TVJ = 25°C 30 pF I RM max. reverse recovery current TVJ = 25 °C 13 A TVJ = 100°C 20 A t rr reverse recovery time TVJ = 25 °C 80 ns TVJ = 100°C 220 ns rectangular for power loss calculation only 0,45 K/W IXYS reserves the right to change limits, conditions and dimensions. K/W 0,15 TC = 25°C IF = © 2022 IXYS all rights reserved d = 0.5 60 A; VR = 600 V -di F /dt = 200 A/µs 330 500 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20220610d DSEC120-12AK Package Ratings TO-264 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 °C -55 150 °C 150 °C 1) 10 Weight MD mounting torque FC mounting force with clip g 0,8 1,2 Nm 20 120 N IXYS Logo Part Number XXXXXXXXX Date Code yywwZ 1234 Lot# Location Ordering Standard Ordering Number DSEC120-12AK Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEC120-12AK * on die level Delivery Mode Tube Code No. 498653 T VJ = 175 °C Fast Diode V 0 max threshold voltage 1,08 V R0 max slope resistance * 6,8 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Quantity 25 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610d DSEC120-12AK Outlines TO-264 A E A2 S SYM Q R ØT Q1 D R1 1 2 3 L1 L b b1 c A1 b2 e Back side Rückseite 4 MILLIMETERS MIN MAX 0.190 0.202 0.100 0.114 0.079 0.083 0.044 0.056 0.094 0.106 0.114 0.122 0.021 0.033 1.020 1.030 0.780 0.786 5.46 BSC MIN MAX 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 .215 BSC 0.000 0.000 0.800 0.090 0.125 0.239 0.330 0.150 0.070 0.238 0.062 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 0.010 0.010 0.820 0.102 0.144 0.247 0.342 0.170 0.090 0.248 0.072 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 ØP 1 IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T INCHES 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610d DSEC120-12AK Fast Diode 100 10 TVJ = 150°C TVJ = 100°C TVJ = 25°C 80 100 TVJ = 100°C VR = 600 V TVJ = 100°C VR = 600 V 8 60 80 IF = 120 A IF = 60 A IF = 30 A 6 Qr IF 40 60 IRM 4 40 [µC] [A] 20 [A] 2 0 0 1 2 20 0 1 00 3 IF = 120 A IF = 60 A IF = 30 A 0 1000 0 200 -diF /dt [A/µs] VF [V] Fig. 1 Forward current IF versus VF 600 800 1000 -diF /dt [A/µs] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 2.0 400 280 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 120 1.2 TVJ = 100°C VR = 600 V TVJ = 100°C IF = 60 A 1.5 240 80 IF = 120 A IF = 60 A IF = 30 A trr Kf 1.0 VFR [ns] trr [µs] [V] 200 IRM 0.8 40 0.4 0.5 Qr trr VFR 0.0 160 0 40 80 120 160 0 0 TVJ [°C] 200 400 600 800 1000 0 200 -diF /dt [A/µs] Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 400 600 800 0.0 1000 -diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 0.5 0.4 Constants for ZthJC calculation: ZthJC 0.3 [K/W] 0.2 0.1 i Rthi (K/W) ti (s) 1 0.0050 0.0001 2 0.0550 0.0010 3 0.1750 0.0140 4 0.2150 0.2300 0.0 1 10 100 t [ms] 1000 10000 Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610d