DSEC16-04AS

DSEC 16-04AS HiPerFREDTM Epitaxial Diode IFAV = 2x 10 A VRRM = 400 V trr = 30 ns with common cathode and soft recovery Preliminary Data VRSM VRRM V V 400 400 TO-263 AB Type DSEC 16-04AS A C A A Symbol Conditions IFRMS IFAVM TC = 140°C; rectangular, d = 0.5 35 10 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 60 A Maximum Ratings EAS TVJ = 25°C; non-repetitive IAS = 2 A; L = 180 µH 0.5 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.2 A -55...+175 175 -55...+150 °C °C °C 60 W 2 g Features ● ● ● Ptot TC = 25°C Weight typical ● ● ● ● TVJ TVJM Tstg ● ● ● Conditions Characteristic Values typ. max. ● ● IR ① VF ② TVJ = 25°C; VR = VRRM TVJ = 150°C; VR = VRRM 60 0.25 µA mA IF = 10 A; 1.12 1.53 V V 2.5 K/W TVJ = 150°C TVJ = 25°C RthJC trr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C 30 IRM VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs TVJ = 100°C 2 ns ● ● Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● ● 2.4 International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications ● Symbol C (TAB) A A ● Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IXYS reserves the right to change limits, Conditions and dimensions. © 2002 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 207 Dimensions see IXYS Databook 2001 1-1 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670