DSEC16-06AC

DSEC16-06AC ADVANCE TECHNICAL INFORMATION IFAV = 2x10 A VRRM = 600 V trr = 35 ns HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface VRSM VRRM V V 600 600 Type DSEC16-06AC ISOPLUS220TM 1 2 3 1 2 3 Isolated back surface * Symbol Conditions Maximum Ratings * Patent pending TC = 85°C; rectangular, d = 0.5 35 10 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 50 A EAS TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH 0.1 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.1 A -55...+175 175 -55...+150 °C °C °C 50 W 2500 V~ 20...120 N 3 g IFRMS IFAVM TVJ TVJM Tstg Ptot TC = 25°C VISOL 50/60 Hz RMS; IISOL £ 1 mA FC mounting force with clip Weight typical Features l l l l l l l l Applications l Symbol IR  VF ‚ Conditions Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 60 0.25 µA mA IF = 10 A; 1.42 2.10 V V 3 0.4 K/W K/W 35 ns TVJ = 125°C TVJ = 25°C RthJC RthCH trr IF = 1 A; -di/dt = 50 A/µs; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs TVJ = 100°C l l l l l l l A l l Notes: Data given for TVJ = 25OC and per diode unless otherwise specified ‚ Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 % ƒ Pulse test: pulse Width = 300 ms, Duty Cycle < 2.0 % IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages l 4.4 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (