DSEC240-04A
HiPerFRED
VRRM
=
400 V
I FAV
= 2x 120 A
t rr
=
30 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DSEC240-04A
Backside: cathode
2
1
5
3
4
Features / Advantages:
Applications:
Package: SOT-227UI (minibloc)
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20220608e
DSEC240-04A
Ratings
Fast Diode
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
400
V
IR
reverse current, drain current
VF
forward voltage drop
min.
typ.
max. Unit
400
V
VR = 400 V
TVJ = 25°C
2
mA
VR = 400 V
TVJ = 150°C
8
mA
I F = 120 A
TVJ = 25°C
1,35
V
1,63
V
1,00
V
I F = 240 A
TVJ = 150 °C
I F = 120 A
I F = 240 A
1,33
V
T VJ = 150°C
120
A
TVJ = 150°C
0,74
V
2,8
mΩ
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
CJ
junction capacitance
VR = 200 V f = 1 MHz
TVJ = 25°C
364
pF
I RM
max. reverse recovery current
TVJ = 25 °C
20
A
I F = 120 A; VR = 200 V
TVJ = 100°C
35
A
t rr
reverse recovery time
-di F /dt = 600 A/µs
TVJ = 25 °C
30
ns
TVJ = 100°C
75
ns
TC = 115°C
rectangular
for power loss calculation only
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
d = 0.5
0,2 K/W
K/W
0,1
TC = 25°C
Data according to IEC 60747and per semiconductor unless otherwise specified
620
W
2,00
kA
20220608e
DSEC240-04A
Package
Ratings
SOT-227UI (minibloc)
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
200
Unit
A
-40
150
°C
-40
125
°C
150
°C
30
Weight
g
MD
mounting torque
1,1
1,5
Nm
MT
terminal torque
1,1
1,5
Nm
Product Marking
Logo
Date
Code
yywwZ
XXXXX
123456
Location
Ordering
Standard
Part
Number
Lot#
Ordering Number
DSEC240-04A
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
DSEC240-04A
* on die level
Delivery Mode
Tube
Code No.
485349
T VJ = 150 °C
Fast
Diode
V 0 max
threshold voltage
0,74
V
R0 max
slope resistance *
1,6
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Quantity
10
Data according to IEC 60747and per semiconductor unless otherwise specified
20220608e
DSEC240-04A
Outlines SOT-227UI (minibloc)
2
1
5
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
4
Data according to IEC 60747and per semiconductor unless otherwise specified
20220608e
DSEC240-04A
Fast Diode
250
3000
TVJ = 100°C
VR = 200 V
2500
200
80
TVJ = 100°C
VR = 200 V
60
2000
TVJ = 150°C
150
100°C
25°C
IF
IF = 240 A
Qr
1500
IF = 120 A
IF = 60 A
40
IF = 120 A
[nC]
100
IRM
IF = 240 A
[A]
IF = 60 A
1000
[A]
20
50
500
0
0.0
0.5
1.0
1.5
0
100
2.0
0
1000
VF [V]
Fig. 1 Forward current
IF versus VF
1.6
0
200
400
600
800
1000
-diF /dt [A/μs]
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qr versus -diF /dt
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
160
60
TVJ = 100°C
TVJ = 100°C
VR = 200 V
140
IF = 120 A
50
1.85
1.80
1.2
120
40
1.75
30
rr
1.70
80
20
1.65
60
10
IF = 240 A
IF = 120 A
trr
Kf 0.8
100
[ns]
IRM
0.4
Qr
0.0
40
80
120
160
t
[μs]
[V]
40
0
VFR
IF = 60 A
tfr
VFR
0
0
200
TVJ [°C]
400
600
800
1000
0
200
600
800
1.55
1000
-diF /dt [A/μs]
-diF /dt [A/μs]
Fig. 4 Typ. dynamic parameters
Qr, IRM versus TVJ
400
1.60
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
Fig. 5 Typ. recovery time
trr versus -diF /dt
0.5
0.1
ZthJC
0.01
[K/W]
Constants for ZthJC calculation:
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
i
Rthi (K/W)
ti (s)
1
0.064
0.113
2
0.137
1.105
10
t [s]
Fig. 7 Transient thermal resistance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20220608e
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