DSEC240-06A

DSEC240-06A HiPerFRED VRRM = 600 V I FAV = 2x 120 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DSEC240-06A Backside: cathode 2 1 5 3 4 Features / Advantages: Applications: Package: SOT-227UI (minibloc) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610e DSEC240-06A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 V IR reverse current, drain current VF forward voltage drop min. typ. max. Unit 600 V VR = 600 V TVJ = 25°C 2 mA VR = 600 V TVJ = 150°C 8 mA I F = 120 A TVJ = 25°C 1,91 V 2,16 V 1,26 V I F = 240 A TVJ = 150 °C I F = 120 A I F = 240 A 1,51 V T VJ = 150°C 120 A TVJ = 150°C 1,03 V 1,91 mΩ I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C 214 pF I RM max. reverse recovery current TVJ = 25 °C 11 A I F = 100 A; VR = 300 V TVJ = 100°C 19 A t rr reverse recovery time -di F /dt = 400 A/µs TVJ = 25 °C 35 ns TVJ = 100°C 105 ns TC = 110°C rectangular for power loss calculation only IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved d = 0.5 0,2 K/W K/W 0,1 TC = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 620 W 2,00 kA 20220610e DSEC240-06A Package Ratings SOT-227UI (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1,1 1,5 Nm MT terminal torque 1,1 1,5 Nm Product Marking Logo Date Code yywwZ XXXXX 123456 Location Ordering Standard Part Number Lot# Ordering Number DSEC240-06A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEC240-06A * on die level Delivery Mode Tube Code No. 485357 T VJ = 150 °C Fast Diode V 0 max threshold voltage 1,03 V R0 max slope resistance * 0,7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610e DSEC240-06A Outlines SOT-227UI (minibloc) 2 1 5 3 IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved 4 Data according to IEC 60747and per semiconductor unless otherwise specified 20220610e DSEC240-06A Fast Diode 240 6 120 TVJ = 100°C TVJ = 100°C 200 IF VR = 300 V 5 160 4 120 IRM IF = 200 A 100 A 3 100°C 25°C [A] 80 Qr TVJ = 150°C 60 [nC] 2 40 40 1 20 0 0 1 IF = 200 A 100 A [A] 80 0 VR = 300 V 100 0 2 1000 VF [V] 0 400 -diF /dt [A/µs] Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 140 2.0 1200 1600 2000 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 20 TVJ = 100°C 1.2 TVJ = 100°C VR = 300 V 130 800 -diF /dt [A/µs] IF = 200 A 15 1.5 0.9 120 trr Kf 1.0 110 10 [µs] 100 IRM 5 Qr 0.3 80 40 80 120 160 tfr VFR 90 0.0 0 0.6 [V] [ns] 0.5 tfr VFR IF = 200 A 100 A 0 0 TVJ [°C] 400 800 1200 1600 2000 0 400 -diF /dt [A/µs] Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 800 0.0 1200 1600 2000 -diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 1 0.1 ZthJC Constants for ZthJC calculation: 0.01 [K/W] 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 i Rthi (K/W) ti (s) 1 0.0001 0.0001 2 0.0100 0.0050 3 0.0350 0.0060 4 0.1550 0.1300 1 t [s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220610e