DSEC29-02AS

DSEC 29-02AS HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x15 A VRRM = 200 V trr = 25 ns VRSM VRRM TO-263 V V gn 200 A DSEC 29-02AS A = Anode, C = Cathode, TAB = Cathode Symbol Conditions IFRMS IFAVM TC = 150°C; rectangular, d = 0.5 Maximum Ratings IFSM A A TVJ = 45°C; tp = 10 ms (50 Hz), sine 140 A EAS TVJ = 25°C; non-repetitive IAS = 2.5 A; L = 180 µH 0.8 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.3 A Ptot TC = 25°C Md mounting torque Weight typical VF ② IRM w 0.45...0.55 4...5 2 Conditions Nm lb.in. g Characteristic Values typ. max. TVJ = 25°C; VR = VRRM TVJ = 150°C; VR = VRRM 100 0.5 µA mA IF = 15 A; 0.86 1.06 V V 1.6 0.5 K/W K/W 25 ns TVJ = 150°C TVJ = 25°C IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C No trr W 95 t RthJC RthCH °C °C °C fo r ① IR -55...+175 175 -55...+150 ne TVJ TVJM Tstg VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs TVJ = 100°C Features • • • • • • • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 de 35 15 Symbol C (TAB) A si 200 Type 3.5 4.4 A Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 μs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Recommended replacement: DPG 30C200PC 20070731a 1-2 DSEC 29-02AS 700 nC 600 A 30 TVJ = 100°C Qr TVJ = 150°C 30 IRM 500 400 TVJ = 100°C TVJ = 25°C 300 20 VR = 100 V 25 40 IF TVJ = 100°C A VR = 100 V IF = 30 A 20 IF = 15 A IF = 7.5 A 15 IF = 30 A IF = 15 A IF = 7.5 A gn 50 10 200 10 5 100 0.8 1.2 V VF 0 100 1.6 Fig. 1 Forward current IF versus VF 0 A/μs 1000 -diF/dt Fig. 2 Typ. reverse recovery charge Qr 80 1.4 trr 600 A/μs 800 1000 -diF/dt Fig. 3 Typ. peak reverse current IRM 0.40 μs 0.35 tfr VFR V VR = 100 V 70 30 VFR IF = 30 A IF = 15 A 60 0.30 0.25 w IF = 7.5 A 1.0 ne 50 0.8 400 tfr Kf IRM 200 40 TVJ = 100°C ns 1.2 0 si 0.4 de 0 0.0 20 0.20 TVJ = 100°C 0.15 IF = 15 A 10 0.10 40 Qr 0.6 0 40 30 80 120 °C 160 0 fo r TVJ Fig. 4 Typ. dynamic parameters Qr, IRM 10 K/W 1 200 400 0 600 A/μs 800 1000 0 200 400 -diF/dt 0.00 600 A/μs 800 1000 diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr Fig. 5 Typ. recovery time trr versus -diF/dt t ZthJC 0.05 No 0.1 Constants for ZthJC calculation: i 0.01 0.001 0.00001 DSEC 29-02A 0.0001 0.001 0.01 s 0.1 1 2 4 Rthi (K/W) ti (s) 0.851 0.328 0.421 0.0052 0.0003 0.0409 1 t Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20070731a 2-2