DSEC30-02A

DSEC 30-02A HiPerFREDTM Epitaxial Diode IFAV = 2x15 A VRRM = 200 V trr = 25 ns with common cathode and soft recovery VRSM VRRM V V 200 200 A Type C A TO-247 AD A C A DSEC 30-02A C (TAB) D4 Test Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 150°C; rectangular, d = 0.5 TC = 115°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS TVJ = 25°C; non-repetitive IAS = 2.5 A; L = 180 µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive A A A 140 A 0.8 mJ 0.3 A TC = 25°C Md mounting torque Weight typical Symbol Test Conditions RthJC RthCH W 6 fo Nm g Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 100 0.5 µA mA IF = 15 A; 0.85 1.05 V V 1.6 K/W K/W t VF ② 95 0.8...1.2 TVJ = 150°C TVJ = 25°C No ① °C °C °C r Ptot -55...+175 175 -55...+150 ne TVJ TVJM Tstg IR 50 15 30 w Symbol de si gn A = Anode, C = Cathode, TAB = Cathode 0.25 trr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C 25 IRM VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs TVJ = 100°C 3.5 Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % ns 4.4 A Features • • • • • • • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Recommended replacement: DPG 30C200HB IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 311 Data according to IEC 60747 and per diode unless otherwise specified 20070731a 1-2 DSEC 30-02A 50 30 700 nC 600 A TVJ = 100°C VR = 100 V Qr TVJ = 150°C 30 IRM 500 400 TVJ = 100°C TVJ = 25°C 300 20 IF = 30 A 20 IF = 15 A IF = 7.5 A 15 10 1.2 V VF 0 100 1.6 Fig. 1 Forward current IF versus VF 0 A/µs 1000 -diF/dt Fig. 2 Typ. reverse recovery charge Qr 80 1.4 trr IF = 15 A w ne 50 ZthJC 200 0.30 0.25 0.20 20 TVJ = 100°C 600 A/µs 800 0.15 IF = 15 A 0.10 0 400 1000 0 200 400 -diF/dt Fig. 5 Typ. recovery time trr versus -diF/dt 0.00 600 A/µs 800 1000 diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr Constants for ZthJC calculation: No 10 0.40 µs 0.35 tfr 0.05 t Fig. 4 Typ. dynamic parameters Qr, IRM 1 0 fo 120 °C 160 VFR 10 30 80 TVJ K/W r 40 40 Fig. 3 Typ. peak reverse current IRM IF = 7.5 A IRM 0 600 A/µs 800 1000 -diF/dt 30 VFR IF = 30 A 1.0 0.6 400 V VR = 100 V 70 60 Qr 200 tfr Kf 0.8 0 40 TVJ = 100°C ns 1.2 IF = 7.5 A de si gn 0.8 IF = 15 A 5 100 0.4 IF = 30 A 10 200 0 0.0 VR = 100 V 25 40 IF TVJ = 100°C A i 1 2 4 Rthi (K/W) ti (s) 0.851 0.328 0.421 0.0052 0.0003 0.0409 0.1 0.01 0.001 0.00001 DSEC 30-02A 0.0001 0.001 0.01 s 0.1 1 t 311 Fig. 7 Transient thermal resistance junction to case 20070731a 2-2 © 2003 IXYS All rights reserved