DSEC 30-03A
HiPerFREDTM Epitaxial Diode
IFAV = 2x15 A
VRRM = 300 V
trr
= 30 ns
with common cathode and soft recovery
VRSM
VRRM
V
V
300
300
A
Type
C
A
TO-247 AD
A
C
A
DSEC 30-03A
C (TAB)
D4
A = Anode, C = Cathode, TAB = Cathode
Conditions
Maximum Ratings
IFRMS
IFAVM
TC = 140°C; rectangular, d = 0.5
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
EAS
TVJ = 25°C; non-repetitive
IAS = 2.5 A; L = 180 µH
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
A
A
110
A
0.8
mJ
0.3
A
-55...+175
175
-55...+150
°C
°C
°C
95
W
Md
mounting torque
Weight
typical
Symbol
Conditions
VF ②
0.8...1.2
fo
t
6
Nm
g
Characteristic Values
typ.
max.
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
100
0.5
µA
mA
IF = 15 A;
1.20
1.67
V
V
1.6
K/W
K/W
No
①
ne
TC = 25°C
r
Ptot
IR
50
15
w
TVJ
TVJM
Tstg
TVJ = 150°C
TVJ = 25°C
RthJC
RthCH
0.25
trr
IF = 1 A; -di/dt = 100 A/µs;
VR = 30 V; TVJ = 25°C
IRM
VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs
TVJ = 100°C
Features
de
si
gn
Symbol
30
2.7
A
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
Recommended replacement:
DPG 30C300HB
IXYS reserves the right to change limits, test conditions and dimensions.
20070605a
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
ns
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© 2007 IXYS All rights reserved
1-2
Data according to IEC 60747 and per diode unless otherwise specified
DSEC 30-03A
40
20
500
TVJ = 100°C
nC
A
VR = 150V
400
30
IF
TVJ = 100°C
A
VR = 150V
IRM
Qr
TVJ=150°C
20
IF = 15A
IF = 30A
300
TVJ=100°C
IF = 30A
15
IF = 7.5A
IF = 15A
TVJ= 25°C
10
IF = 7.5A
200
10
5
100
0
0
V
1
0
100
2
0
A/µs 1000
-diF/dt
VF
Fig. 2 Reverse recovery charge Qr
1.4
80
600 A/µs
800 1000
-diF/dt
Fig. 3 Peak reverse current IRM
12
VFR
Kf
IF = 30A
60
µs
IF = 15A
0.80
tfr
tfr
VFR
10
IF = 15A
1.0
0.85
TVJ = 100°C
V
VR = 150V
70
trr
400
14
TVJ = 100°C
ns
1.2
200
de
si
gn
Fig. 1 Forward current IF versus VF
0
0.75
w
IF = 7.5A
IRM
50
ne
Qr
0.8
0.6
30
40
80
120 °C 160
TVJ
200
400
0.70
6
0.65
4
600
800 1000
A/µs
0
200
400
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
0.60
600 A/µs
800 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
No
t
Fig. 4 Dynamic parameters Qr, IRM
0
fo
0
r
40
8
10
K/W
Constants for ZthJC calculation:
i
1
1
2
3
ZthJC
Rthi (K/W)
ti (s)
0.851
0.328
0.421
0.005
0.0003
0.041
0.1
0.01
0.001
0.00001
DSEC 30-03A
0.0001
0.001
0.01
s
0.1
1
t
NOTE: Fig. 2 to Fig. 6 shows typical values
2-2
20070605a
Fig. 7 Transient thermal resistance junction to case
© 2007 IXYS All rights reserved
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