DSEC30-03A

DSEC 30-03A HiPerFREDTM Epitaxial Diode IFAV = 2x15 A VRRM = 300 V trr = 30 ns with common cathode and soft recovery VRSM VRRM V V 300 300 A Type C A TO-247 AD A C A DSEC 30-03A C (TAB) D4 A = Anode, C = Cathode, TAB = Cathode Conditions Maximum Ratings IFRMS IFAVM TC = 140°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS TVJ = 25°C; non-repetitive IAS = 2.5 A; L = 180 µH IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive A A 110 A 0.8 mJ 0.3 A -55...+175 175 -55...+150 °C °C °C 95 W Md mounting torque Weight typical Symbol Conditions VF ② 0.8...1.2 fo t 6 Nm g Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM 100 0.5 µA mA IF = 15 A; 1.20 1.67 V V 1.6 K/W K/W No ① ne TC = 25°C r Ptot IR 50 15 w TVJ TVJM Tstg TVJ = 150°C TVJ = 25°C RthJC RthCH 0.25 trr IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs TVJ = 100°C Features de si gn Symbol 30 2.7 A International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf Recommended replacement: DPG 30C300HB IXYS reserves the right to change limits, test conditions and dimensions. 20070605a Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % ns • • • • • • • © 2007 IXYS All rights reserved 1-2 Data according to IEC 60747 and per diode unless otherwise specified DSEC 30-03A 40 20 500 TVJ = 100°C nC A VR = 150V 400 30 IF TVJ = 100°C A VR = 150V IRM Qr TVJ=150°C 20 IF = 15A IF = 30A 300 TVJ=100°C IF = 30A 15 IF = 7.5A IF = 15A TVJ= 25°C 10 IF = 7.5A 200 10 5 100 0 0 V 1 0 100 2 0 A/µs 1000 -diF/dt VF Fig. 2 Reverse recovery charge Qr 1.4 80 600 A/µs 800 1000 -diF/dt Fig. 3 Peak reverse current IRM 12 VFR Kf IF = 30A 60 µs IF = 15A 0.80 tfr tfr VFR 10 IF = 15A 1.0 0.85 TVJ = 100°C V VR = 150V 70 trr 400 14 TVJ = 100°C ns 1.2 200 de si gn Fig. 1 Forward current IF versus VF 0 0.75 w IF = 7.5A IRM 50 ne Qr 0.8 0.6 30 40 80 120 °C 160 TVJ 200 400 0.70 6 0.65 4 600 800 1000 A/µs 0 200 400 -diF/dt Fig. 5 Recovery time trr versus -diF/dt 0.60 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr No t Fig. 4 Dynamic parameters Qr, IRM 0 fo 0 r 40 8 10 K/W Constants for ZthJC calculation: i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 0.851 0.328 0.421 0.005 0.0003 0.041 0.1 0.01 0.001 0.00001 DSEC 30-03A 0.0001 0.001 0.01 s 0.1 1 t NOTE: Fig. 2 to Fig. 6 shows typical values 2-2 20070605a Fig. 7 Transient thermal resistance junction to case © 2007 IXYS All rights reserved