Advanced Technical Information
HiPerFREDTM Epitaxial Diode
IFAV = 2x15 A
VRRM = 400 V
trr = 30 ns
with common cathode and soft recovery
VRSM
VRRM
V
V
400
400
A
Type
C
DSEC 30-04A
A
TO-247 AD
A
C
A
DSEC 30-04A
C (TAB)
Maximum Ratings
IFRMS
IFAVM
TC = 145°C; rectangular, d = 0.5
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
EAS
TVJ = 25°C; non-repetitive
IAS = tbd A; L = tbd µH
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
TC = 25°C
Md
mounting torque
Weight
typical
Symbol
Conditions
RthJC
RthCH
A
tbd
mJ
tbd
A
95
W
0.8...1.2
Nm
6
g
fo
Characteristic Values
typ.
max.
TVJ = 25°C
TVJ = 150°C
100
0.5
µA
mA
IF = 15 A;
TVJ = 150°C
TVJ = 25°C
1.06
1.47
V
V
1.6
K/W
K/W
t
VR = VRRM;
VR = VRRM;
No
VF ②
tbd
°C
°C
°C
r
Ptot
①
A
A
-55...+175
175
-55...+150
ne
TVJ
TVJM
Tstg
IR
50
15
0.25
t rr
IF = 1 A; -di/dt = 100 A/µs;
VR = 30 V; TVJ = 25°C
30
IRM
VR = 100 V; IF = 25 A;
-diF/dt = 100 A/µs; TVJ = 100°C
5.0
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserve
ns
6.3
A
Features
•
•
•
•
•
•
•
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see Outlines.pdf
Recommended replacement:
DPG 30C400HB
127
Conditions
w
Symbol
de
si
gn
A = Anode, C = Cathode, TAB = Cathode
20070731a
1-1
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